component
FDN352AP
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDN352AP
UMW · MOSFETs · SOT-23
FDN352AP from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the P-channel MOSFET; the datasheet gives the gate-source voltage limit as VGSS = ±25 V. |
| 2 | S | passive | SOURCE terminal of the P-channel MOSFET; the datasheet specifies no pin-specific limit. |
| 3 | D | passive | DRAIN terminal of the P-channel MOSFET; the drain-source voltage limit is VDSS = -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-24V, VGS=0V | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 150 | mΩ | VGS=-10V, ID=-1.3A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 250 | mΩ | VGS=-4.5V, ID=-1.1A | 2 | ||
| Drain-Source Voltage | VDSS | -30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 1 | ||
| Drain Current, Continuous | ID | -1.3 | A | Note 1a | 1 | ||
| Drain Current, Pulsed | ID | -10 | A | Pulsed | 1 | ||
| Maximum Power Dissipation | PD | 0.5 | W | Note 1a | 1 | ||
| Maximum Power Dissipation | PD | 0.46 | W | Note 1b | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 250 | °C/W | Note 1a | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 75 | °C/W | Note 1 | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 270 | °C/W | Note 1b | 3 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | -0.42 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS=-0.42A (Note 2) | 3 |
CAD (KiCad official)
- Symbol:
FDN352AP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fdn352ap-etched.step/fdn352ap-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdn352ap.step/fdn352ap.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (8 pp, sha256
517c78c63f59ce46, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).