component
BFP196E6327HTSA1
Public Made by Adomby adom
Infineon Technologies Bipolar Transistors - BJT, SOT-143-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBFP196E6327HTSA1
Infineon Technologies · Bipolar Transistors - BJT · SOT-143-4
BFP196E6327HTSA1 from Infineon Technologies, in a SOT-143-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector pin; the datasheet lists VCEO 12 V, VCES 20 V, and collector current IC 150 mA as maximum ratings. |
| 2 | E | passive | Emitter pin; the datasheet lists emitter-base voltage VEBO 2 as a maximum rating, and the unit is not shown in the extracted text. |
| 3 | B | input | Base pin; the datasheet lists base current IB 15 as a maximum rating, and the unit is not shown in the extracted text. |
| 4 | E | passive | Second emitter pin, listed as E in the pin configuration table alongside pin 2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-143-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 | 2 | ||
| Collector-emitter cutoff current | ICES | 100 | µA | VCE = 20 V, VBE = 0 | 2 | ||
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 | 2 | ||
| Emitter-base cutoff current | IEBO | 1 | µA | VEB = 1 V, IC = 0 | 2 | ||
| DC current gain | hFE | 70 | 100 | 140 | - | IC = 50 mA, VCE = 8 V, pulse measured | 2 |
| Transition frequency | fT | 5 | 7.5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz | 3 | |
| Collector-base capacitance | Ccb | 0.83 | 1.3 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 | |
| Total power dissipation | Ptot | 700 | mW | TS ≤ 77°C | 1 | ||
| Ambient temperature | TA | -65 | 150 | °C | 1 | ||
| Storage temperature | TStg | -65 | 150 | °C | 1 | ||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Collector-emitter voltage | VCEO | 12 | V | 1 | |||
| Collector-emitter voltage | VCES | 20 | V | 1 | |||
| Collector-base voltage | VCBO | 20 | V | 1 | |||
| Emitter-base voltage | VEBO | 2 | V | 1 | |||
| Collector current | IC | 150 | mA | 1 | |||
| Base current | IB | 15 | mA | 1 | |||
| Junction - soldering point thermal resistance | RthJS | 105 | K/W | 1 | |||
| Emitter-base capacitance | Ceb | 3.9 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded | 3 | ||
| Collector emitter capacitance | Cce | 0.35 | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded | 3 | ||
| Minimum noise figure at 900 MHz | NFmin | 1.3 | dB | IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz | 3 | ||
| Minimum noise figure at 1.8 GHz | NFmin | 2.3 | dB | IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz | 3 | ||
| Power gain, maximum available at 900 MHz | Gma | 16.5 | dB | IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz | 3 | ||
| Power gain, maximum available at 1.8 GHz | Gma | 10.5 | dB | IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz | 3 | ||
| Transducer gain at 900 MHz | /S21e/2 | 13 | dB | IC = 50 mA, VCE = 8 V, ZS = ZL = 50Ω, f = 900 MHz | 3 | ||
| Transducer gain at 1.8 GHz | /S21e/2 | 7 | dB | IC = 50 mA, VCE = 8 V, ZS = ZL = 50Ω, f = 1.8 GHz | 3 | ||
| Third order intercept point at output | IP3 | 32 | dBm | IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 0.9 GHz | 3 | ||
| 1dB compression point | P-1dB | 19 | IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 0.9 GHz | 3 |
CAD (KiCad official)
- Symbol:
BFP196E6327HTSA1 - Footprint:
Package_TO_SOT_SMD:SOT-143 - 3D model: SOT-143-4 (KiCad packages3D, STEP)
- 3D model files:
bfp196e6327htsa1-etched.step/bfp196e6327htsa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bfp196e6327htsa1.step/bfp196e6327htsa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (6 pp, sha256
165165ef8a29bb25, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).