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BFP196E6327HTSA1

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Infineon Technologies Bipolar Transistors - BJT, SOT-143-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BFP196E6327HTSA1

Infineon Technologies · Bipolar Transistors - BJT · SOT-143-4

BFP196E6327HTSA1 from Infineon Technologies, in a SOT-143-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector pin; the datasheet lists VCEO 12 V, VCES 20 V, and collector current IC 150 mA as maximum ratings.
2 E passive Emitter pin; the datasheet lists emitter-base voltage VEBO 2 as a maximum rating, and the unit is not shown in the extracted text.
3 B input Base pin; the datasheet lists base current IB 15 as a maximum rating, and the unit is not shown in the extracted text.
4 E passive Second emitter pin, listed as E in the pin configuration table alongside pin 2.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-143-4
Category Transistors/Thyristors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CEO 12 V IC = 1 mA, IB = 0 2
Collector-emitter cutoff current ICES 100 µA VCE = 20 V, VBE = 0 2
Collector-base cutoff current ICBO 100 nA VCB = 10 V, IE = 0 2
Emitter-base cutoff current IEBO 1 µA VEB = 1 V, IC = 0 2
DC current gain hFE 70 100 140 - IC = 50 mA, VCE = 8 V, pulse measured 2
Transition frequency fT 5 7.5 GHz IC = 70 mA, VCE = 8 V, f = 500 MHz 3
Collector-base capacitance Ccb 0.83 1.3 pF VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded 3
Total power dissipation Ptot 700 mW TS ≤ 77°C 1
Ambient temperature TA -65 150 °C 1
Storage temperature TStg -65 150 °C 1
Junction temperature TJ 150 °C 1
Collector-emitter voltage VCEO 12 V 1
Collector-emitter voltage VCES 20 V 1
Collector-base voltage VCBO 20 V 1
Emitter-base voltage VEBO 2 V 1
Collector current IC 150 mA 1
Base current IB 15 mA 1
Junction - soldering point thermal resistance RthJS 105 K/W 1
Emitter-base capacitance Ceb 3.9 pF VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded 3
Collector emitter capacitance Cce 0.35 pF VCE = 10 V, f = 1 MHz, VBE = 0, base grounded 3
Minimum noise figure at 900 MHz NFmin 1.3 dB IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz 3
Minimum noise figure at 1.8 GHz NFmin 2.3 dB IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz 3
Power gain, maximum available at 900 MHz Gma 16.5 dB IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz 3
Power gain, maximum available at 1.8 GHz Gma 10.5 dB IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz 3
Transducer gain at 900 MHz /S21e/2 13 dB IC = 50 mA, VCE = 8 V, ZS = ZL = 50Ω, f = 900 MHz 3
Transducer gain at 1.8 GHz /S21e/2 7 dB IC = 50 mA, VCE = 8 V, ZS = ZL = 50Ω, f = 1.8 GHz 3
Third order intercept point at output IP3 32 dBm IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 0.9 GHz 3
1dB compression point P-1dB 19 IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 0.9 GHz 3

CAD (KiCad official)

  • Symbol: BFP196E6327HTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-143
  • 3D model: SOT-143-4 (KiCad packages3D, STEP)
  • 3D model files: bfp196e6327htsa1-etched.step / bfp196e6327htsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bfp196e6327htsa1.step / bfp196e6327htsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (6 pp, sha256 165165ef8a29bb25, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF