component
RS150N105T
Public Made by Adomby adom
REASUNOS MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRS150N105T
REASUNOS · MOSFETs · TO-220
RS150N105T from REASUNOS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±20 V, threshold 3.6 to 5.0 V at VGS=VDS, ID=250 µA. |
| 2 | D | passive | Drain (also connected to the tab); VDSS 150 V, continuous current 105 A at TC=25℃, pulsed 420 A. |
| 3 | S | passive | Source; continuous body-diode current 105 A, RDS(on) 9.8 mΩ typ (11 mΩ max) at VGS=10V, ID=60A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 150 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 105 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 75 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 420 | A | 1 | |||
| Power Dissipation | PD | 380 | W | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1000 | mJ | L = 0.3mH,VDS = 50V, RG = 25Ω, Tj = 25℃ | 1 | ||
| Maximum Soldering Temperature, Leads | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from Case for 10 seconds | 1 | ||
| Maximum Soldering Temperature, Package Body | TPKG | 260 | ℃ | Package Body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V,ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=150V,VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V,VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V,VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 9.8 | 11 | mΩ | VGS=10V,ID=60A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 3.6 | 5 | V | VGS=VDS,ID=250µA | 2 | |
| Continuous Source Current | IS | 105 | A | Integral pn-diode in MOSFET | 3 | ||
| Maximum Pulsed Current | ISM | 420 | A | Integral pn-diode in MOSFET | 3 | ||
| Diode Forward Voltage | VSD | 1.2 | V | IS=60A,VGS=0V | 3 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.36 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 60 | ℃/W | 1 cubic foot chamber, free air | 2 | ||
| Turn-on Delay Time | td(ON) | 45 | nS | VDS=50V, ID=40A, RG=2.5Ω, VGS=10V | 2 | ||
| Rise Time | trise | 70 | nS | VDS=50V, ID=40A, RG=2.5Ω, VGS=10V | 2 | ||
| Turn-OFF Delay Time | td(OFF) | 110 | nS | VDS=50V, ID=40A, RG=2.5Ω, VGS=10V | 2 | ||
| Fall Time | tfall | 90 | nS | VDS=50V, ID=40A, RG=2.5Ω, VGS=10V | 2 | ||
| Input Capacitance | Ciss | 7000 | pF | VGS=0V, VDS=50V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 480 | pF | VGS=0V, VDS=50V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 210 | pF | VGS=0V, VDS=50V, f=1MHz | 3 | ||
| Total Gate Charge | Qg | 85 | nC | VDS=100V, ID=40A, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 15 | nC | VDS=100V, ID=40A, VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 25 | nC | VDS=100V, ID=40A, VGS=10V | 3 | ||
| Reverse Recovery Time | trr | 110 | nS | VGS=0V, IS=30A, di/dt=100A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 0.55 | µC | VGS=0V, IS=30A, di/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
RS150N105T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
rs150n105t-etched.step/rs150n105t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs150n105t.step/rs150n105t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (9 pp, sha256
8a50d4bfbf594be7, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).