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RS150N105T

Public Made by Adom

by adom

REASUNOS MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RS150N105T

REASUNOS · MOSFETs · TO-220

RS150N105T from REASUNOS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±20 V, threshold 3.6 to 5.0 V at VGS=VDS, ID=250 µA.
2 D passive Drain (also connected to the tab); VDSS 150 V, continuous current 105 A at TC=25℃, pulsed 420 A.
3 S passive Source; continuous body-diode current 105 A, RDS(on) 9.8 mΩ typ (11 mΩ max) at VGS=10V, ID=60A.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 150 V Tc=25℃ 1
Continuous Drain Current ID 105 A TC=25℃ 1
Continuous Drain Current ID 75 A TC=100℃ 1
Pulsed Drain Current IDM 420 A 1
Power Dissipation PD 380 W 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 1000 mJ L = 0.3mH,VDS = 50V, RG = 25Ω, Tj = 25℃ 1
Maximum Soldering Temperature, Leads TL 300 ℃ Leads at 0.063in(1.6mm) from Case for 10 seconds 1
Maximum Soldering Temperature, Package Body TPKG 260 ℃ Package Body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-to-Source Breakdown Voltage BVDSS 150 V VGS=0V,ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=150V,VGS=0V 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V,VDS=0V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V,VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 9.8 11 mΩ VGS=10V,ID=60A 2
Gate Threshold Voltage VGS(TH) 3.6 5 V VGS=VDS,ID=250µA 2
Continuous Source Current IS 105 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 420 A Integral pn-diode in MOSFET 3
Diode Forward Voltage VSD 1.2 V IS=60A,VGS=0V 3
Junction-to-Case Thermal Resistance RθJC 0.36 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 60 ℃/W 1 cubic foot chamber, free air 2
Turn-on Delay Time td(ON) 45 nS VDS=50V, ID=40A, RG=2.5Ω, VGS=10V 2
Rise Time trise 70 nS VDS=50V, ID=40A, RG=2.5Ω, VGS=10V 2
Turn-OFF Delay Time td(OFF) 110 nS VDS=50V, ID=40A, RG=2.5Ω, VGS=10V 2
Fall Time tfall 90 nS VDS=50V, ID=40A, RG=2.5Ω, VGS=10V 2
Input Capacitance Ciss 7000 pF VGS=0V, VDS=50V, f=1MHz 3
Output Capacitance Coss 480 pF VGS=0V, VDS=50V, f=1MHz 3
Reverse Transfer Capacitance Crss 210 pF VGS=0V, VDS=50V, f=1MHz 3
Total Gate Charge Qg 85 nC VDS=100V, ID=40A, VGS=10V 3
Gate-to-Source Charge Qgs 15 nC VDS=100V, ID=40A, VGS=10V 3
Gate-to-Drain (Miller) Charge Qgd 25 nC VDS=100V, ID=40A, VGS=10V 3
Reverse Recovery Time trr 110 nS VGS=0V, IS=30A, di/dt=100A/µs 3
Reverse Recovery Charge Qrr 0.55 µC VGS=0V, IS=30A, di/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: RS150N105T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: rs150n105t-etched.step / rs150n105t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs150n105t.step / rs150n105t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (9 pp, sha256 8a50d4bfbf594be7, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF