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SI4948BEY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4948BEY-T1-GE3
Vishay Intertech · MOSFETs · SOP-8
SI4948BEY-T1-GE3 from Vishay Intertech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of P-channel MOSFET 1, which is rated VDS = -60 V with continuous drain current ID = -3.1 A at TA = 25 °C. |
| 2 | G1 | passive | Gate of P-channel MOSFET 1, with gate-source voltage limited to ±20 V and gate threshold VGS(th) between -1 V and -3 V. |
| 3 | S2 | passive | Source terminal of P-channel MOSFET 2, which is rated VDS = -60 V with continuous drain current ID = -3.1 A at TA = 25 °C. |
| 4 | G2 | passive | Gate of P-channel MOSFET 2, with gate-source voltage limited to ±20 V and gate threshold VGS(th) between -1 V and -3 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2, rated for VDS = -60 V; pin is labelled D2 alongside pin 6. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, rated for VDS = -60 V; second drain pin of the same channel. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1, rated for VDS = -60 V; pin is labelled D1 alongside pin 8. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, rated for VDS = -60 V; second drain pin of the same channel. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = - 60 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | -25 | A | VDS = - 5 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.1 | 0.12 | Ω | VGS = - 10 V, ID = - 3.1 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.126 | 0.15 | Ω | VGS = - 4.5 V, ID = - 0.2 A | 2 | |
| Forward Transconductance | gfs | 8.5 | S | VDS = - 15 V, ID = - 3.1 A | 2 | ||
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | IS = - 2 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 14.5 | 22 | nC | VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A | 2 | |
| Gate-Source Charge | Qgs | 2.2 | nC | VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A | 2 | ||
| Gate-Drain Charge | Qgd | 3.7 | nC | VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A | 2 | ||
| Gate Resistance | Rg | 14 | Ω | f = 1 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 10 | 15 | ns | VDD = - 30 V, RL = 30 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 15 | 22 | ns | VDD = - 30 V, RL = 30 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 50 | 75 | ns | VDD = - 30 V, RL = 30 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 35 | 55 | ns | VDD = - 30 V, RL = 30 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 30 | 50 | ns | IF = - 2 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TJ = 150 °C), 10 s | ID | -3.1 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current (TJ = 150 °C), steady state | ID | -2.4 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current (TJ = 150 °C), 10 s | ID | -2.6 | A | TA = 70 °C | 1 | ||
| Continuous Drain Current (TJ = 150 °C), steady state | ID | -2 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current (10 µs Pulse Width) | IDM | -25 | A | 10 µs pulse width | 1 | ||
| Continuous Source Current (Diode Conduction), 10 s | IS | -2 | A | 1 | |||
| Continuous Source Current (Diode Conduction), steady state | IS | -1.1 | A | 1 | |||
| Avalanche Current | IAS | 15 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 11 | mJ | 1 | |||
| Maximum Power Dissipation, 10 s | PD | 2.4 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation, steady state | PD | 1.4 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation, 10 s | PD | 1.7 | W | TA = 70 °C | 1 | ||
| Maximum Power Dissipation, steady state | PD | 0.95 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient, t ≤ 10 s | RthJA | 53 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 85 | 110 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot, steady state | RthJF | 30 | 37 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
SI4948BEY-T1-GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si4948bey-t1-ge3-etched.step/si4948bey-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4948bey-t1-ge3.step/si4948bey-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
11a8ead95940bc07, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).