component
AUN065N10
Public Made by Adomby adom
ANHI MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAUN065N10
ANHI · MOSFETs · DFN-8(5x6)
AUN065N10 from ANHI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal; one of three source pads (labelled S on the DFN5x6 package view), connected to the internal MOSFET source. |
| 2 | S | passive | Source terminal; one of three source pads (labelled S on the DFN5x6 package view), connected to the internal MOSFET source. |
| 3 | S | passive | Source terminal; one of three source pads (labelled S on the DFN5x6 package view), connected to the internal MOSFET source. |
| 4 | G | input | Gate terminal; VGS rated -20 V to 20 V static, threshold 1 to 3 V at ID=250 uA. |
| 5 | D | passive | Drain terminal; one of four drain pads, VDS rated 100 V, continuous ID 76 A at TC=25 C. |
| 6 | D | passive | Drain terminal; one of four drain pads, VDS rated 100 V, continuous ID 76 A at TC=25 C. |
| 7 | D | passive | Drain terminal; one of four drain pads, VDS rated 100 V, continuous ID 76 A at TC=25 C. |
| 8 | D | passive | Drain terminal; one of four drain pads, VDS rated 100 V, continuous ID 76 A at TC=25 C. |
| 9 | Tab | passive | Exposed drain tab, connected to the drain per the internal circuit (Drain Pin 2 / Tab); RthJC max 1.4 C/W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 76 | A | TC=25°C | 2 | ||
| Pulsed drain current | ID,pulse | 304 | A | TC=25°C | 2 | ||
| Avalanche energy, single pulse | EAS | 105 | mJ | 2 | |||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 2 | |
| Power dissipation | Ptot | 91 | W | TC=25°C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction - case | RthJC | 1.4 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 63 | °C/W | device on PCB, minimal footprint | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA | 4 | ||
| Gate threshold voltage | V(GS)th | 1 | 3 | V | VDS=VGS, ID=250uA | 4 | |
| Zero gate voltage drain current | IDSS | 1000 | nA | VDS=100V, VGS=0V, Tj=25°C | 4 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 0.0058 | 0.0065 | Ω | VGS=10V, ID=20A, Tj=25°C | 4 | |
| Drain-source on-state resistance | RDS(on) | 0.0079 | 0.01 | Ω | VGS=4.5V, ID=20A, Tj=25°C | 4 |
CAD (KiCad official)
- Symbol:
AUN065N10 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aun065n10-etched.step/aun065n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aun065n10.step/aun065n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ANHI datasheet (9 pp, sha256
e805fa42a5cba1b1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).