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AUN065N10

Public Made by Adom

by adom

ANHI MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AUN065N10

ANHI · MOSFETs · DFN-8(5x6)

AUN065N10 from ANHI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal; one of three source pads (labelled S on the DFN5x6 package view), connected to the internal MOSFET source.
2 S passive Source terminal; one of three source pads (labelled S on the DFN5x6 package view), connected to the internal MOSFET source.
3 S passive Source terminal; one of three source pads (labelled S on the DFN5x6 package view), connected to the internal MOSFET source.
4 G input Gate terminal; VGS rated -20 V to 20 V static, threshold 1 to 3 V at ID=250 uA.
5 D passive Drain terminal; one of four drain pads, VDS rated 100 V, continuous ID 76 A at TC=25 C.
6 D passive Drain terminal; one of four drain pads, VDS rated 100 V, continuous ID 76 A at TC=25 C.
7 D passive Drain terminal; one of four drain pads, VDS rated 100 V, continuous ID 76 A at TC=25 C.
8 D passive Drain terminal; one of four drain pads, VDS rated 100 V, continuous ID 76 A at TC=25 C.
9 Tab passive Exposed drain tab, connected to the drain per the internal circuit (Drain Pin 2 / Tab); RthJC max 1.4 C/W.

Key specifications

Parameter Value
Manufacturer ANHI
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 76 A TC=25°C 2
Pulsed drain current ID,pulse 304 A TC=25°C 2
Avalanche energy, single pulse EAS 105 mJ 2
Gate source voltage (static) VGS -20 20 V static 2
Power dissipation Ptot 91 W TC=25°C 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj -55 150 °C 2
Thermal resistance, junction - case RthJC 1.4 °C/W 3
Thermal resistance, junction - ambient RthJA 63 °C/W device on PCB, minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250uA 4
Gate threshold voltage V(GS)th 1 3 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 1000 nA VDS=100V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 0.0058 0.0065 Ω VGS=10V, ID=20A, Tj=25°C 4
Drain-source on-state resistance RDS(on) 0.0079 0.01 Ω VGS=4.5V, ID=20A, Tj=25°C 4

CAD (KiCad official)

  • Symbol: AUN065N10
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: aun065n10-etched.step / aun065n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aun065n10.step / aun065n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (9 pp, sha256 e805fa42a5cba1b1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF