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Contents

README

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G05NP06S2

GOFORD · MOSFETs · SOP-8

G05NP06S2 from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the datasheet pin diagram shows it at pin 1.
2 G1 input Gate of MOSFET 1; the NMOS gate-source limit is ±20V and the threshold is 1.0 to 2.0V.
3 S2 passive Source of MOSFET 2; the datasheet pin diagram shows it at pin 3.
4 G2 input Gate of MOSFET 2; the PMOS gate-source limit is ±20V and the threshold is -1.2 to -2.2V.
5 D2 passive Drain of MOSFET 2, which is tied to pin 6; the PMOS is rated VDS -60V and ID -3.1A.
6 D2 passive Drain of MOSFET 2, which is tied to pin 5; the PMOS is rated VDS -60V and ID -3.1A.
7 D1 passive Drain of MOSFET 1, which is tied to pin 8; the NMOS is rated VDS 60V and ID 5A.
8 D1 passive Drain of MOSFET 1, which is tied to pin 7; the NMOS is rated VDS 60V and ID 5A.

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage VDS 60 V TC = 25ºC 1
P-ch Drain-Source Voltage VDS -60 V TC = 25ºC 1
N-ch Continuous Drain Current ID 5 A TC = 25ºC 1
P-ch Continuous Drain Current ID -3.1 A TC = 25ºC 1
N-ch Pulsed Drain Current IDM 20 A TC = 25ºC 1
P-ch Pulsed Drain Current IDM -12.4 A TC = 25ºC 1
N-ch Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
P-ch Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
N-ch Power Dissipation PD 2.5 W TC = 25ºC 1
P-ch Power Dissipation PD 1.9 W TC = 25ºC 1
N-ch Operating Junction and Storage Temperature TJ, Tstg -55 150 ºC 1
P-ch Operating Junction and Storage Temperature TJ, Tstg -55 150 ºC 1
N-ch Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
P-ch Thermal Resistance, Junction-to-Ambient RthJA 65 ºC/W 1
N-ch Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
N-ch Zero Gate Voltage Drain Current IDSS 1 μA VDS = 60V, VGS = 0V, TJ = 25ºC 2
N-ch Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
N-ch Gate-Source Threshold Voltage VGS(th) 1 1.5 2 V VDS = VGS, ID = 250µA 2
N-ch Drain-Source On-Resistance RDS(on) 28 36 mΩ VGS = 10V, ID = 4.3A 2
N-ch Drain-Source On-Resistance RDS(on) 31 40 mΩ VGS = 4.5V, ID = 3.9A 2
N-ch Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 1.7A, VGS = 0V 2
N-ch Continuous Body Diode Current IS 5 A TC = 25ºC 2
P-ch Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS = 0V, ID = -250µA 6
P-ch Zero Gate Voltage Drain Current IDSS -1 μA VDS = -60V, VGS = 0V, TJ = 25ºC 6
P-ch Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 6
P-ch Gate-Source Threshold Voltage VGS(th) -1.2 -1.7 -2.2 V VDS = VGS, ID = -250µA 6
P-ch Drain-Source On-Resistance RDS(on) 62 80 mΩ VGS = -10V, ID = -3.1A 6
P-ch Drain-Source On-Resistance RDS(on) 72 95 mΩ VGS = -4.5V, ID = -0.2A 6
P-ch Continuous Body Diode Current IS -3.1 A TC = 25ºC 6
P-ch Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -2A, VGS = 0V 6
N-ch Forward Transconductance gFS 9.6 S VDS=5V, ID=4.3A 2
N-ch Input Capacitance Ciss 1336 pF VGS = 0V, VDS = 30V, f = 1.0MHz 2
N-ch Output Capacitance Coss 56 pF VGS = 0V, VDS = 30V, f = 1.0MHz 2
N-ch Reverse Transfer Capacitance Crss 52 pF VGS = 0V, VDS = 30V, f = 1.0MHz 2
N-ch Total Gate Charge Qg 22 nC VDS = 30V, ID = 5A, VGS = 10V 2
N-ch Gate-Source Charge Qgs 3.3 nC VDS = 30V, ID = 5A, VGS = 10V 2
N-ch Gate-Drain Charge Qgd 5.2 nC VDS = 30V, ID = 5A, VGS = 10V 2
N-ch Turn-on Delay Time td(on) 5.2 ns VDD = 30V, ID = 5A, RG = 3Ω 2
N-ch Turn-on Rise Time tr 3 ns VDD = 30V, ID = 5A, RG = 3Ω 2
N-ch Turn-off Delay Time td(off) 17 ns VDD = 30V, ID = 5A, RG = 3Ω 2
N-ch Turn-off Fall Time tf 2.5 ns VDD = 30V, ID = 5A, RG = 3Ω 2
P-ch Forward Transconductance gFS 6.6 S VDS=-5V, ID=-3.1A 6
P-ch Input Capacitance Ciss 1454 pF VGS = 0V, VDS = -30V, f = 1.0MHz 6
P-ch Output Capacitance Coss 62 pF VGS = 0V, VDS = -30V, f = 1.0MHz 6
P-ch Reverse Transfer Capacitance Crss 58 pF VGS = 0V, VDS = -30V, f = 1.0MHz 6
P-ch Total Gate Charge Qg 37 nC VDD = -30V, ID = -3A, VGS = -10V 6
P-ch Gate-Source Charge Qgs 4.5 nC VDD = -30V, ID = -3A, VGS = -10V 6
P-ch Gate-Drain Charge Qgd 10.5 nC VDD = -30V, ID = -3A, VGS = -10V 6
P-ch Turn-on Delay Time td(on) 8 ns VDD = -30V, ID = -3A, RG = 3Ω 6
P-ch Turn-on Rise Time tr 4 ns VDD = -30V, ID = -3A, RG = 3Ω 6
P-ch Turn-off Delay Time td(off) 32 ns VDD = -30V, ID = -3A, RG = 3Ω 6
P-ch Turn-off Fall Time tf 7 ns VDD = -30V, ID = -3A, RG = 3Ω 6

CAD (KiCad official)

  • Symbol: G05NP06S2
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: g05np06s2-etched.step / g05np06s2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g05np06s2.step / g05np06s2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (10 pp, sha256 64828c66ea422961, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF