component
G05NP06S2
Public Made by Adomby adom
GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG05NP06S2
GOFORD · MOSFETs · SOP-8
G05NP06S2 from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the datasheet pin diagram shows it at pin 1. |
| 2 | G1 | input | Gate of MOSFET 1; the NMOS gate-source limit is ±20V and the threshold is 1.0 to 2.0V. |
| 3 | S2 | passive | Source of MOSFET 2; the datasheet pin diagram shows it at pin 3. |
| 4 | G2 | input | Gate of MOSFET 2; the PMOS gate-source limit is ±20V and the threshold is -1.2 to -2.2V. |
| 5 | D2 | passive | Drain of MOSFET 2, which is tied to pin 6; the PMOS is rated VDS -60V and ID -3.1A. |
| 6 | D2 | passive | Drain of MOSFET 2, which is tied to pin 5; the PMOS is rated VDS -60V and ID -3.1A. |
| 7 | D1 | passive | Drain of MOSFET 1, which is tied to pin 8; the NMOS is rated VDS 60V and ID 5A. |
| 8 | D1 | passive | Drain of MOSFET 1, which is tied to pin 7; the NMOS is rated VDS 60V and ID 5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 60 | V | TC = 25ºC | 1 | ||
| P-ch Drain-Source Voltage | VDS | -60 | V | TC = 25ºC | 1 | ||
| N-ch Continuous Drain Current | ID | 5 | A | TC = 25ºC | 1 | ||
| P-ch Continuous Drain Current | ID | -3.1 | A | TC = 25ºC | 1 | ||
| N-ch Pulsed Drain Current | IDM | 20 | A | TC = 25ºC | 1 | ||
| P-ch Pulsed Drain Current | IDM | -12.4 | A | TC = 25ºC | 1 | ||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| N-ch Power Dissipation | PD | 2.5 | W | TC = 25ºC | 1 | ||
| P-ch Power Dissipation | PD | 1.9 | W | TC = 25ºC | 1 | ||
| N-ch Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| P-ch Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| N-ch Thermal Resistance, Junction-to-Ambient | RthJA | 50 | ºC/W | 1 | |||
| P-ch Thermal Resistance, Junction-to-Ambient | RthJA | 65 | ºC/W | 1 | |||
| N-ch Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 60V, VGS = 0V, TJ = 25ºC | 2 | ||
| N-ch Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| N-ch Gate-Source Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS = VGS, ID = 250µA | 2 |
| N-ch Drain-Source On-Resistance | RDS(on) | 28 | 36 | mΩ | VGS = 10V, ID = 4.3A | 2 | |
| N-ch Drain-Source On-Resistance | RDS(on) | 31 | 40 | mΩ | VGS = 4.5V, ID = 3.9A | 2 | |
| N-ch Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 1.7A, VGS = 0V | 2 | ||
| N-ch Continuous Body Diode Current | IS | 5 | A | TC = 25ºC | 2 | ||
| P-ch Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0V, ID = -250µA | 6 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -60V, VGS = 0V, TJ = 25ºC | 6 | ||
| P-ch Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 6 | |
| P-ch Gate-Source Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS = VGS, ID = -250µA | 6 |
| P-ch Drain-Source On-Resistance | RDS(on) | 62 | 80 | mΩ | VGS = -10V, ID = -3.1A | 6 | |
| P-ch Drain-Source On-Resistance | RDS(on) | 72 | 95 | mΩ | VGS = -4.5V, ID = -0.2A | 6 | |
| P-ch Continuous Body Diode Current | IS | -3.1 | A | TC = 25ºC | 6 | ||
| P-ch Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -2A, VGS = 0V | 6 | ||
| N-ch Forward Transconductance | gFS | 9.6 | S | VDS=5V, ID=4.3A | 2 | ||
| N-ch Input Capacitance | Ciss | 1336 | pF | VGS = 0V, VDS = 30V, f = 1.0MHz | 2 | ||
| N-ch Output Capacitance | Coss | 56 | pF | VGS = 0V, VDS = 30V, f = 1.0MHz | 2 | ||
| N-ch Reverse Transfer Capacitance | Crss | 52 | pF | VGS = 0V, VDS = 30V, f = 1.0MHz | 2 | ||
| N-ch Total Gate Charge | Qg | 22 | nC | VDS = 30V, ID = 5A, VGS = 10V | 2 | ||
| N-ch Gate-Source Charge | Qgs | 3.3 | nC | VDS = 30V, ID = 5A, VGS = 10V | 2 | ||
| N-ch Gate-Drain Charge | Qgd | 5.2 | nC | VDS = 30V, ID = 5A, VGS = 10V | 2 | ||
| N-ch Turn-on Delay Time | td(on) | 5.2 | ns | VDD = 30V, ID = 5A, RG = 3Ω | 2 | ||
| N-ch Turn-on Rise Time | tr | 3 | ns | VDD = 30V, ID = 5A, RG = 3Ω | 2 | ||
| N-ch Turn-off Delay Time | td(off) | 17 | ns | VDD = 30V, ID = 5A, RG = 3Ω | 2 | ||
| N-ch Turn-off Fall Time | tf | 2.5 | ns | VDD = 30V, ID = 5A, RG = 3Ω | 2 | ||
| P-ch Forward Transconductance | gFS | 6.6 | S | VDS=-5V, ID=-3.1A | 6 | ||
| P-ch Input Capacitance | Ciss | 1454 | pF | VGS = 0V, VDS = -30V, f = 1.0MHz | 6 | ||
| P-ch Output Capacitance | Coss | 62 | pF | VGS = 0V, VDS = -30V, f = 1.0MHz | 6 | ||
| P-ch Reverse Transfer Capacitance | Crss | 58 | pF | VGS = 0V, VDS = -30V, f = 1.0MHz | 6 | ||
| P-ch Total Gate Charge | Qg | 37 | nC | VDD = -30V, ID = -3A, VGS = -10V | 6 | ||
| P-ch Gate-Source Charge | Qgs | 4.5 | nC | VDD = -30V, ID = -3A, VGS = -10V | 6 | ||
| P-ch Gate-Drain Charge | Qgd | 10.5 | nC | VDD = -30V, ID = -3A, VGS = -10V | 6 | ||
| P-ch Turn-on Delay Time | td(on) | 8 | ns | VDD = -30V, ID = -3A, RG = 3Ω | 6 | ||
| P-ch Turn-on Rise Time | tr | 4 | ns | VDD = -30V, ID = -3A, RG = 3Ω | 6 | ||
| P-ch Turn-off Delay Time | td(off) | 32 | ns | VDD = -30V, ID = -3A, RG = 3Ω | 6 | ||
| P-ch Turn-off Fall Time | tf | 7 | ns | VDD = -30V, ID = -3A, RG = 3Ω | 6 |
CAD (KiCad official)
- Symbol:
G05NP06S2 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
g05np06s2-etched.step/g05np06s2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g05np06s2.step/g05np06s2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (10 pp, sha256
64828c66ea422961, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).