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BSC037N08NS5-HXY
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HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSC037N08NS5-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
BSC037N08NS5-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel SGT MOSFET, shown on the package pin diagram (pin 1 marked); continuous drain current is rated 100A at TC=25°C. |
| 2 | S | passive | Source terminal of the N-channel SGT MOSFET, shown on the package pin diagram; continuous drain current is rated 100A at TC=25°C. |
| 3 | S | passive | Source terminal of the N-channel SGT MOSFET, shown on the package pin diagram; continuous drain current is rated 100A at TC=25°C. |
| 4 | G | input | Gate terminal, rated ±20V gate-source maximum with threshold VGS(th) of 2V min to 4V max at ID=250µA. |
| 5 | D | passive | Drain terminal, rated 85V drain-source maximum with RDS(on) below 5.6mΩ at VGS=10V. |
| 6 | D | passive | Drain terminal, rated 85V drain-source maximum with RDS(on) below 5.6mΩ at VGS=10V. |
| 7 | D | passive | Drain terminal, rated 85V drain-source maximum with RDS(on) below 5.6mΩ at VGS=10V. |
| 8 | D | passive | Drain terminal, rated 85V drain-source maximum with RDS(on) below 5.6mΩ at VGS=10V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 85 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 100 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 63.3 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 273.8 | mJ | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 107.8 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.16 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 60 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 85 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-body Leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 85V, VGS = 0V, TJ=25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 85V, VGS = 0V, TJ=100°C | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source on-Resistance | RDS(on) | 4.3 | 5.6 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS = 20A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 100 | A | TC=25°C | 2 | ||
| Forward Transconductance | gfs | 57.8 | S | VDS = 5V, ID =20A | 2 | ||
| Input Capacitance | Ciss | 4645 | pF | VDS = 40V, VGS =0V, f =1MHz | 2 | ||
| Output Capacitance | Coss | 673 | pF | VDS = 40V, VGS =0V, f =1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 41 | pF | VDS = 40V, VGS =0V, f =1MHz | 2 | ||
| Gate Resistance | Rg | 2 | Ω | f=1MHz | 2 | ||
| Total Gate Charge | Qg | 61.3 | nC | VGS = 10V, VDS = 40V, ID= 20A | 2 | ||
| Gate-Source Charge | Qgs | 21 | nC | VGS = 10V, VDS = 40V, ID= 20A | 2 | ||
| Gate-Drain Charge | Qgd | 11 | nC | VGS = 10V, VDS = 40V, ID= 20A | 2 | ||
| Turn-on Delay Time | td(on) | 16.5 | ns | VGS =10V, VDD = 40V, RG = 3Ω, ID= 20A | 2 | ||
| Rise Time | tr | 51.8 | ns | VGS =10V, VDD = 40V, RG = 3Ω, ID= 20A | 2 | ||
| Turn-off Delay Time | td(off) | 37.1 | ns | VGS =10V, VDD = 40V, RG = 3Ω, ID= 20A | 2 | ||
| Fall Time | tf | 8.2 | ns | VGS =10V, VDD = 40V, RG = 3Ω, ID= 20A | 2 | ||
| Body Diode Reverse Recovery Time | trr | 69 | ns | IF=20A, di/dt = 100A/μS | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 141 | nC | IF=20A, di/dt = 100A/μS | 2 |
CAD (KiCad official)
- Symbol:
BSC037N08NS5-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
bsc037n08ns5-hxy-etched.step/bsc037n08ns5-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc037n08ns5-hxy.step/bsc037n08ns5-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
576f603b241ff388, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).