component

BSC037N08NS5-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorbsc037n08ns5-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 15d ago
viewers bsc037n08ns5-hxy: viewers · Ray 15d ago
bsc037n08ns5-hxy-etched.glb Publish 0.1.0 · Ray 15d ago
bsc037n08ns5-hxy-etched.step bsc037n08ns5-hxy: factory component page (tier=lcsc) · Ray 15d ago
bsc037n08ns5-hxy-hero.glb bsc037n08ns5-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 15d ago
bsc037n08ns5-hxy-hero.overlay.json Publish 0.1.0 · Ray 15d ago
bsc037n08ns5-hxy.glb Publish 0.1.0 · Ray 15d ago
bsc037n08ns5-hxy.kicad_mod Publish 0.1.0 · Ray 15d ago
bsc037n08ns5-hxy.kicad_sym Publish 0.1.0 · Ray 15d ago
bsc037n08ns5-hxy.lbr Publish 0.1.0 · Ray 15d ago
bsc037n08ns5-hxy.step Publish 0.1.0 · Ray 15d ago
package.json Publish 0.1.0 · Ray 15d ago
page.json Set visibility: public · Ray 15d ago
README.md Publish 0.1.0 · Ray 15d ago

BSC037N08NS5-HXY

HXY MOSFET · MOSFETs · DFN5x6-8L

BSC037N08NS5-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel SGT MOSFET, shown on the package pin diagram (pin 1 marked); continuous drain current is rated 100A at TC=25°C.
2 S passive Source terminal of the N-channel SGT MOSFET, shown on the package pin diagram; continuous drain current is rated 100A at TC=25°C.
3 S passive Source terminal of the N-channel SGT MOSFET, shown on the package pin diagram; continuous drain current is rated 100A at TC=25°C.
4 G input Gate terminal, rated ±20V gate-source maximum with threshold VGS(th) of 2V min to 4V max at ID=250µA.
5 D passive Drain terminal, rated 85V drain-source maximum with RDS(on) below 5.6mΩ at VGS=10V.
6 D passive Drain terminal, rated 85V drain-source maximum with RDS(on) below 5.6mΩ at VGS=10V.
7 D passive Drain terminal, rated 85V drain-source maximum with RDS(on) below 5.6mΩ at VGS=10V.
8 D passive Drain terminal, rated 85V drain-source maximum with RDS(on) below 5.6mΩ at VGS=10V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5x6-8L
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 85 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 100 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 63.3 A VGS @ 10V 1
Pulsed Drain Current IDM 400 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 273.8 mJ TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 107.8 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Case RθJC 1.16 ℃/W 1
Thermal Resistance Junction-Ambient RθJA 60 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 85 V VGS = 0V, ID = 250µA 2
Gate-body Leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 85V, VGS = 0V, TJ=25°C 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 85V, VGS = 0V, TJ=100°C 2
Gate-Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250µA 2
Drain-Source on-Resistance RDS(on) 4.3 5.6 mΩ VGS = 10V, ID = 20A 2
Diode Forward Voltage VSD 1.2 V IS = 20A, VGS = 0V 2
Continuous Source Current IS 100 A TC=25°C 2
Forward Transconductance gfs 57.8 S VDS = 5V, ID =20A 2
Input Capacitance Ciss 4645 pF VDS = 40V, VGS =0V, f =1MHz 2
Output Capacitance Coss 673 pF VDS = 40V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance Crss 41 pF VDS = 40V, VGS =0V, f =1MHz 2
Gate Resistance Rg 2 Ω f=1MHz 2
Total Gate Charge Qg 61.3 nC VGS = 10V, VDS = 40V, ID= 20A 2
Gate-Source Charge Qgs 21 nC VGS = 10V, VDS = 40V, ID= 20A 2
Gate-Drain Charge Qgd 11 nC VGS = 10V, VDS = 40V, ID= 20A 2
Turn-on Delay Time td(on) 16.5 ns VGS =10V, VDD = 40V, RG = 3Ω, ID= 20A 2
Rise Time tr 51.8 ns VGS =10V, VDD = 40V, RG = 3Ω, ID= 20A 2
Turn-off Delay Time td(off) 37.1 ns VGS =10V, VDD = 40V, RG = 3Ω, ID= 20A 2
Fall Time tf 8.2 ns VGS =10V, VDD = 40V, RG = 3Ω, ID= 20A 2
Body Diode Reverse Recovery Time trr 69 ns IF=20A, di/dt = 100A/μS 2
Body Diode Reverse Recovery Charge Qrr 141 nC IF=20A, di/dt = 100A/μS 2

CAD (KiCad official)

  • Symbol: BSC037N08NS5-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: bsc037n08ns5-hxy-etched.step / bsc037n08ns5-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc037n08ns5-hxy.step / bsc037n08ns5-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 576f603b241ff388, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF