component
BSH103BKR
Public Made by Adomby adom
Nexperia MOSFETs, TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSH103BKR
Nexperia · MOSFETs · TO-236AB
BSH103BKR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V (ESD protection > 2 kV HBM), with threshold voltage 0.75 V min to 1.25 V max at ID = 250 µA. |
| 2 | S | passive | Source; source current limited to 0.4 A at Tamb = 25 °C, with source-drain voltage typically 0.7 V and 1.2 V max at IS = 0.4 A. |
| 3 | D | passive | Drain; drain-source voltage up to 30 V and continuous drain current 1 A at VGS = 4.5 V, Tamb = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TO-236AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| drain-source voltage | VDS | 30 | V | 3 | |||
| gate-source voltage | VGS | -12 | 12 | V | Tj = 25 °C | 3 | |
| drain current | ID | 1 | A | VGS = 4.5 V; Tamb = 25 °C | 3 | ||
| drain current | ID | 0.6 | A | VGS = 4.5 V; Tamb = 100 °C | 3 | ||
| peak drain current | IDM | 4 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| total power dissipation | Ptot | 330 | mW | Tamb = 25 °C; standard footprint | 3 | ||
| total power dissipation | Ptot | 480 | mW | Tamb = 25 °C; drain pad 6 cm2 | 3 | ||
| total power dissipation | Ptot | 2.1 | W | Tsp = 25 °C | 3 | ||
| junction temperature | Tj | -55 | 150 | °C | 3 | ||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| source current | IS | 0.4 | A | Tamb = 25 °C | 3 | ||
| thermal resistance junction to ambient | Rth(j-a) | 325 | 374 | K/W | in free air; standard footprint | 5 | |
| thermal resistance junction to ambient | Rth(j-a) | 227 | 260 | K/W | in free air; mounting pad for drain 6 cm2 | 5 | |
| thermal resistance junction to solder point | Rth(j-sp) | 50 | 60 | K/W | 5 | ||
| drain-source breakdown voltage | V(BR)DSS | 30 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| gate-source threshold voltage | VGSth | 0.75 | 1 | 1.25 | V | ID = 250 µA; VDS=VGS; Tj = 25 °C | 6 |
| drain leakage current | IDSS | 1 | µA | VDS = 30 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | 10 | µA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | -10 | µA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | 1 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | -1 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| drain-source on-state resistance | RDSon | 230 | 270 | mΩ | VGS = 4.5 V; ID = 1 A; Tj = 25 °C | 6 | |
| drain-source on-state resistance | RDSon | 380 | 450 | mΩ | VGS = 4.5 V; ID = 1 A; Tj = 150 °C | 6 | |
| drain-source on-state resistance | RDSon | 295 | 355 | mΩ | VGS = 2.5 V; ID = 0.9 A; Tj = 25 °C | 6 | |
| drain-source on-state resistance | RDSon | 470 | 670 | mΩ | VGS = 1.8 V; ID = 0.1 A; Tj = 25 °C | 6 | |
| total gate charge | QG(tot) | 0.8 | 1.2 | nC | VDS = 15 V; ID = 1 A; VGS = 4.5 V; Tj = 25 °C | 6 | |
| source-drain voltage | VSD | 0.7 | 1.2 | V | IS = 0.4 A; VGS = 0 V; Tj = 25 °C | 6 | |
| forward transconductance | gfs | 2.9 | S | VDS = 5 V; ID = 1 A; Tj = 25 °C | 6 | ||
| gate resistance | RG | 18.3 | Ω | f = 1 MHz | 6 | ||
| gate-source charge | QGS | 0.1 | nC | VDS = 15 V; ID = 1 A; VGS = 4.5 V; Tj = 25 °C | 6 | ||
| gate-drain charge | QGD | 0.2 | nC | VDS = 15 V; ID = 1 A; VGS = 4.5 V; Tj = 25 °C | 6 | ||
| input capacitance | Ciss | 79.3 | pF | VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | ||
| output capacitance | Coss | 11.8 | pF | VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | ||
| reverse transfer capacitance | Crss | 7.6 | pF | VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | ||
| turn-on delay time | td(on) | 2 | ns | VDS = 15 V; ID = 1 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | ||
| rise time | tr | 3 | ns | VDS = 15 V; ID = 1 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | ||
| turn-off delay time | td(off) | 6 | ns | VDS = 15 V; ID = 1 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | ||
| fall time | tf | 3 | ns | VDS = 15 V; ID = 1 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
BSH103BKR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236AB (KiCad packages3D, STEP)
- 3D model files:
bsh103bkr-etched.step/bsh103bkr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsh103bkr.step/bsh103bkr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (13 pp, sha256
27d55ec702b6c8ed, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).