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BSH103BKR

Public Made by Adom

by adom

Nexperia MOSFETs, TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSH103BKR

Nexperia · MOSFETs · TO-236AB

BSH103BKR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V (ESD protection > 2 kV HBM), with threshold voltage 0.75 V min to 1.25 V max at ID = 250 µA.
2 S passive Source; source current limited to 0.4 A at Tamb = 25 °C, with source-drain voltage typically 0.7 V and 1.2 V max at IS = 0.4 A.
3 D passive Drain; drain-source voltage up to 30 V and continuous drain current 1 A at VGS = 4.5 V, Tamb = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
drain-source voltage VDS 30 V 3
gate-source voltage VGS -12 12 V Tj = 25 °C 3
drain current ID 1 A VGS = 4.5 V; Tamb = 25 °C 3
drain current ID 0.6 A VGS = 4.5 V; Tamb = 100 °C 3
peak drain current IDM 4 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
total power dissipation Ptot 330 mW Tamb = 25 °C; standard footprint 3
total power dissipation Ptot 480 mW Tamb = 25 °C; drain pad 6 cm2 3
total power dissipation Ptot 2.1 W Tsp = 25 °C 3
junction temperature Tj -55 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
source current IS 0.4 A Tamb = 25 °C 3
thermal resistance junction to ambient Rth(j-a) 325 374 K/W in free air; standard footprint 5
thermal resistance junction to ambient Rth(j-a) 227 260 K/W in free air; mounting pad for drain 6 cm2 5
thermal resistance junction to solder point Rth(j-sp) 50 60 K/W 5
drain-source breakdown voltage V(BR)DSS 30 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
gate-source threshold voltage VGSth 0.75 1 1.25 V ID = 250 µA; VDS=VGS; Tj = 25 °C 6
drain leakage current IDSS 1 µA VDS = 30 V; VGS = 0 V; Tj = 25 °C 6
gate leakage current IGSS 10 µA VGS = 12 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS -10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS 1 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS -1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C 6
drain-source on-state resistance RDSon 230 270 mΩ VGS = 4.5 V; ID = 1 A; Tj = 25 °C 6
drain-source on-state resistance RDSon 380 450 mΩ VGS = 4.5 V; ID = 1 A; Tj = 150 °C 6
drain-source on-state resistance RDSon 295 355 mΩ VGS = 2.5 V; ID = 0.9 A; Tj = 25 °C 6
drain-source on-state resistance RDSon 470 670 mΩ VGS = 1.8 V; ID = 0.1 A; Tj = 25 °C 6
total gate charge QG(tot) 0.8 1.2 nC VDS = 15 V; ID = 1 A; VGS = 4.5 V; Tj = 25 °C 6
source-drain voltage VSD 0.7 1.2 V IS = 0.4 A; VGS = 0 V; Tj = 25 °C 6
forward transconductance gfs 2.9 S VDS = 5 V; ID = 1 A; Tj = 25 °C 6
gate resistance RG 18.3 Ω f = 1 MHz 6
gate-source charge QGS 0.1 nC VDS = 15 V; ID = 1 A; VGS = 4.5 V; Tj = 25 °C 6
gate-drain charge QGD 0.2 nC VDS = 15 V; ID = 1 A; VGS = 4.5 V; Tj = 25 °C 6
input capacitance Ciss 79.3 pF VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
output capacitance Coss 11.8 pF VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
reverse transfer capacitance Crss 7.6 pF VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
turn-on delay time td(on) 2 ns VDS = 15 V; ID = 1 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6
rise time tr 3 ns VDS = 15 V; ID = 1 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6
turn-off delay time td(off) 6 ns VDS = 15 V; ID = 1 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6
fall time tf 3 ns VDS = 15 V; ID = 1 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: BSH103BKR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: bsh103bkr-etched.step / bsh103bkr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsh103bkr.step / bsh103bkr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 27d55ec702b6c8ed, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF