component
BFN 26 E6327
Public Made by Adomby adom
Infineon Technologies Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBFN 26 E6327
Infineon Technologies · Bipolar (BJT) · SOT-23
BFN 26 E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal; the base current IB is rated to 100 mA and the peak base current IBM to 200 mA. |
| 2 | E | passive | Emitter terminal; the emitter-base voltage VEBO is rated to 6 V. |
| 3 | C | passive | Collector terminal; the collector-emitter voltage VCEO is rated to 300 V for BFN26 with collector current IC of 200 mA (peak 500 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage (BFN26) | V(BR)CEO | 300 | V | IC = 1 mA, IB = 0 | 2 | ||
| Collector-base breakdown voltage (BFN26) | V(BR)CBO | 300 | V | IC = 100 µA, IE = 0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE = 100 µA, IC = 0 | 2 | ||
| Collector-base cutoff current (BFN26) | ICBO | 0.1 | µA | VCB = 250 V, IE = 0, BFN26 | 2 | ||
| Collector-base cutoff current at 150 °C (BFN26) | ICBO | 20 | µA | VCB = 250 V, IE = 0, TA = 150 °C, BFN26 | 2 | ||
| Emitter-base cutoff current | IEBO | 100 | nA | VEB = 5 V, IC = 0 | 2 | ||
| DC current gain | hFE | 25 | IC = 1 mA, VCE = 10 V | 2 | |||
| DC current gain | hFE | 40 | IC = 10 mA, VCE = 10 V | 2 | |||
| DC current gain (BFN26) | hFE | 30 | IC = 30 mA, VCE = 10 V, BFN26 | 2 | |||
| Collector-emitter saturation voltage (BFN26) | VCEsat | 0.5 | V | IC = 20 mA, IB = 2 mA, BFN26 | 2 | ||
| Base-emitter saturation voltage | VBEsat | 0.9 | V | IC = 20 mA, IB = 2 mA | 2 | ||
| Collector-emitter voltage (BFN26) | VCEO | 300 | V | BFN26 | 1 | ||
| Collector-base voltage (BFN26) | VCBO | 300 | V | BFN26 | 1 | ||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current | IC | 200 | mA | 1 | |||
| Peak collector current | ICM | 500 | mA | 1 | |||
| Base current | IB | 100 | mA | 1 | |||
| Peak base current | IBM | 200 | mA | 1 | |||
| Total power dissipation | Ptot | 360 | mW | TS ≤ 74 °C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 1 | ||
| Junction - soldering point thermal resistance | RthJS | 210 | K/W | 2 |
CAD (KiCad official)
- Symbol:
BFN 26 E6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bfn-26-e6327-etched.step/bfn-26-e6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bfn-26-e6327.step/bfn-26-e6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (7 pp, sha256
801adf3d2ceaefd4, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).