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BFN 26 E6327

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Infineon Technologies Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BFN 26 E6327

Infineon Technologies · Bipolar (BJT) · SOT-23

BFN 26 E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal; the base current IB is rated to 100 mA and the peak base current IBM to 200 mA.
2 E passive Emitter terminal; the emitter-base voltage VEBO is rated to 6 V.
3 C passive Collector terminal; the collector-emitter voltage VCEO is rated to 300 V for BFN26 with collector current IC of 200 mA (peak 500 mA).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage (BFN26) V(BR)CEO 300 V IC = 1 mA, IB = 0 2
Collector-base breakdown voltage (BFN26) V(BR)CBO 300 V IC = 100 µA, IE = 0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE = 100 µA, IC = 0 2
Collector-base cutoff current (BFN26) ICBO 0.1 µA VCB = 250 V, IE = 0, BFN26 2
Collector-base cutoff current at 150 °C (BFN26) ICBO 20 µA VCB = 250 V, IE = 0, TA = 150 °C, BFN26 2
Emitter-base cutoff current IEBO 100 nA VEB = 5 V, IC = 0 2
DC current gain hFE 25 IC = 1 mA, VCE = 10 V 2
DC current gain hFE 40 IC = 10 mA, VCE = 10 V 2
DC current gain (BFN26) hFE 30 IC = 30 mA, VCE = 10 V, BFN26 2
Collector-emitter saturation voltage (BFN26) VCEsat 0.5 V IC = 20 mA, IB = 2 mA, BFN26 2
Base-emitter saturation voltage VBEsat 0.9 V IC = 20 mA, IB = 2 mA 2
Collector-emitter voltage (BFN26) VCEO 300 V BFN26 1
Collector-base voltage (BFN26) VCBO 300 V BFN26 1
Emitter-base voltage VEBO 6 V 1
Collector current IC 200 mA 1
Peak collector current ICM 500 mA 1
Base current IB 100 mA 1
Peak base current IBM 200 mA 1
Total power dissipation Ptot 360 mW TS ≤ 74 °C 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 150 °C 1
Junction - soldering point thermal resistance RthJS 210 K/W 2

CAD (KiCad official)

  • Symbol: BFN 26 E6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bfn-26-e6327-etched.step / bfn-26-e6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bfn-26-e6327.step / bfn-26-e6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (7 pp, sha256 801adf3d2ceaefd4, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF