component
TJ60S06M3L
Public Made by Adomby adom
TOSHIBA MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTJ60S06M3L
TOSHIBA · MOSFETs · DPAK
TJ60S06M3L from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the absolute maximum gate-source voltage is VGSS = -20/+10 V. |
| 2 | Drain (heatsink) | passive | Drain terminal, also the heatsink tab; the absolute maximum drain-source voltage is VDSS = -60 V. |
| 3 | Source | passive | Source terminal; the absolute maximum DC reverse drain current is IDR = -60 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -60 | V | 2 | |||
| Gate-source voltage | VGSS | -20 | 10 | V | 2 | ||
| Drain current (DC) | ID | -60 | A | 2 | |||
| Drain current (pulsed) | IDP | -120 | A | 2 | |||
| Power dissipation | PD | 100 | W | 2 | |||
| Single-pulse avalanche energy | EAS | 132 | mJ | VDD = -25 V, Tch = 25°C (initial), L = 50 µH, RG = 25 Ω, IAR = -60 A (Note 2) | 2 | ||
| Avalanche current | IAR | -60 | A | 2 | |||
| Channel temperature | Tch | 175 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 175 | °C | 2 | ||
| Channel-to-case thermal resistance | Rth(ch-c) | 1.5 | /W | 2 | |||
| Gate leakage current | IGSS | -10 | 10 | µA | VGS = -16/+10 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | -10 | µA | VDS = -60 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | ID = -10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSX | -50 | V | ID = -10 mA, VGS = 10 V | 3 | ||
| Gate threshold voltage | Vth | -2 | -3 | V | VDS = -10 V, ID = -1 mA | 3 | |
| Drain-source on-resistance (VGS = -6 V) | RDS(ON) | 9.8 | 14.5 | mΩ | VGS = -6 V, ID = -30 A | 3 | |
| Drain-source on-resistance (VGS = -10 V) | RDS(ON) | 8.6 | 11.2 | mΩ | VGS = -10 V, ID = -30 A | 3 | |
| Reverse drain current (DC) | IDR | -60 | A | 3 | |||
| Reverse drain current (pulsed) | IDRP | -120 | A | 3 | |||
| Diode forward voltage | VDSF | 1.2 | V | IDR = -60 A, VGS = 0 V | 3 |
CAD (KiCad official)
- Symbol:
TJ60S06M3L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
tj60s06m3l-etched.step/tj60s06m3l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tj60s06m3l.step/tj60s06m3l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
d5fdd5cd035eec5d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).