component

TJ60S06M3L

Public Made by Adom

by adom

TOSHIBA MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TJ60S06M3L

TOSHIBA · MOSFETs · DPAK

TJ60S06M3L from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; the absolute maximum gate-source voltage is VGSS = -20/+10 V.
2 Drain (heatsink) passive Drain terminal, also the heatsink tab; the absolute maximum drain-source voltage is VDSS = -60 V.
3 Source passive Source terminal; the absolute maximum DC reverse drain current is IDR = -60 A.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS -60 V 2
Gate-source voltage VGSS -20 10 V 2
Drain current (DC) ID -60 A 2
Drain current (pulsed) IDP -120 A 2
Power dissipation PD 100 W 2
Single-pulse avalanche energy EAS 132 mJ VDD = -25 V, Tch = 25°C (initial), L = 50 µH, RG = 25 Ω, IAR = -60 A (Note 2) 2
Avalanche current IAR -60 A 2
Channel temperature Tch 175 °C 2
Storage temperature Tstg -55 175 °C 2
Channel-to-case thermal resistance Rth(ch-c) 1.5 /W 2
Gate leakage current IGSS -10 10 µA VGS = -16/+10 V, VDS = 0 V 3
Drain cut-off current IDSS -10 µA VDS = -60 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS -60 V ID = -10 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX -50 V ID = -10 mA, VGS = 10 V 3
Gate threshold voltage Vth -2 -3 V VDS = -10 V, ID = -1 mA 3
Drain-source on-resistance (VGS = -6 V) RDS(ON) 9.8 14.5 mΩ VGS = -6 V, ID = -30 A 3
Drain-source on-resistance (VGS = -10 V) RDS(ON) 8.6 11.2 mΩ VGS = -10 V, ID = -30 A 3
Reverse drain current (DC) IDR -60 A 3
Reverse drain current (pulsed) IDRP -120 A 3
Diode forward voltage VDSF 1.2 V IDR = -60 A, VGS = 0 V 3

CAD (KiCad official)

  • Symbol: TJ60S06M3L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: tj60s06m3l-etched.step / tj60s06m3l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tj60s06m3l.step / tj60s06m3l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 d5fdd5cd035eec5d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF