component
AOD2N60
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD2N60
Alpha & Omega Semicon · MOSFETs · TO-252
AOD2N60 from Alpha & Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V maximum, with a gate threshold of 3 V min, 4 V typ and 4.5 V max. |
| 2 | D | passive | Drain, which is also the exposed tab; drain-source voltage is rated at 600 V, with continuous drain current of 2 A at TC=25°C. |
| 3 | S | passive | Source; continuous body-diode current is 2 A maximum and pulsed body-diode current is 8 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | ID=250µA, VGS=0V, TJ=150°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nΑ | VDS=0V, VGS=±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 4 | 4.5 | V | VDS=5V, ID=250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | 10 | µA | VDS=600V, VGS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.6 | 4.4 | Ω | VGS=10V, ID=1A | 2 | |
| Diode Forward Voltage | VSD | 0.79 | 1 | V | IS=1A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 8 | A | 2 | |||
| Input Capacitance | Ciss | 215 | 270 | 325 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output Capacitance | Coss | 23 | 29 | 35 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 2.2 | 2.8 | 3.4 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Gate resistance | Rg | 3.5 | 4.4 | 6.6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | 9.5 | 11 | nC | VGS=10V, VDS=480V, ID=2A | 2 | |
| Gate Source Charge | Qgs | 1.9 | 2 | nC | VGS=10V, VDS=480V, ID=2A | 2 | |
| Gate Drain Charge | Qgd | 4.7 | 6 | nC | VGS=10V, VDS=480V, ID=2A | 2 | |
| Turn-On DelayTime | tD(on) | 17.2 | 21 | ns | VGS=10V, VDS=300V, ID=2A, RG=25Ω | 2 | |
| Turn-On Rise Time | tr | 14.3 | 17 | ns | VGS=10V, VDS=300V, ID=2A, RG=25Ω | 2 | |
| Turn-Off DelayTime | tD(off) | 27 | 32 | ns | VGS=10V, VDS=300V, ID=2A, RG=25Ω | 2 | |
| Turn-Off Fall Time | tf | 17 | 20 | ns | VGS=10V, VDS=300V, ID=2A, RG=25Ω | 2 | |
| Body Diode Reverse Recovery Time | trr | 154 | 185 | ns | IF=2A,dI/dt=100A/µs,VDS=100V | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.8 | 0.96 | µC | IF=2A,dI/dt=100A/µs,VDS=100V | 2 | |
| Drain-Source Voltage | VDS | 600 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 2 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 1.4 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 8 | A | 1 | |||
| Avalanche Current | IAR | 2 | A | 1 | |||
| Repetitive avalanche energy | EAR | 60 | mJ | 1 | |||
| Single pulsed avalanche energy | EAS | 120 | mJ | 1 | |||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 56.8 | W | TC=25°C | 1 | ||
| Derate above 25°C | 0.45 | W/°C | 1 | ||||
| Junction and Storage Temperature Range | TJ, TSTG | -50 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 55 | °C/W | Note A, still air, TA=25°C | 1 | ||
| Maximum Junction-to-Case | RθJC | 1.8 | 2.2 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
AOD2N60 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod2n60-etched.step/aod2n60-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod2n60.step/aod2n60.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256
8d683006cd059363, retrieved 2026-11-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).