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AOD2N60

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Alpha & Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaod2n60factory-2.0.0extractor-text

Verified AOD2N60

by Ray · last 9 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

9 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AOD2N60 · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-l9ukwscw/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ aod2n60.kicad_sym✓ aod2n60.kicad_mod✓ aod2n60.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

AOD2N60

Alpha & Omega Semicon · MOSFETs · TO-252

AOD2N60 from Alpha & Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±30 V maximum, with a gate threshold of 3 V min, 4 V typ and 4.5 V max.
2 D passive Drain, which is also the exposed tab; drain-source voltage is rated at 600 V, with continuous drain current of 2 A at TC=25°C.
3 S passive Source; continuous body-diode current is 2 A maximum and pulsed body-diode current is 8 A maximum.

Key specifications

Parameter Value
Manufacturer Alpha & Omega Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 600 V ID=250µA, VGS=0V, TJ=25°C 2
Drain-Source Breakdown Voltage BVDSS 700 V ID=250µA, VGS=0V, TJ=150°C 2
Gate-Body leakage current IGSS -100 100 nΑ VDS=0V, VGS=±30V 2
Gate Threshold Voltage VGS(th) 3 4 4.5 V VDS=5V, ID=250µA 2
Zero Gate Voltage Drain Current IDSS 1 10 µA VDS=600V, VGS=0V 2
Static Drain-Source On-Resistance RDS(ON) 3.6 4.4 Ω VGS=10V, ID=1A 2
Diode Forward Voltage VSD 0.79 1 V IS=1A,VGS=0V 2
Maximum Body-Diode Continuous Current IS 2 A 2
Maximum Body-Diode Pulsed Current ISM 8 A 2
Input Capacitance Ciss 215 270 325 pF VGS=0V, VDS=25V, f=1MHz 2
Output Capacitance Coss 23 29 35 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse Transfer Capacitance Crss 2.2 2.8 3.4 pF VGS=0V, VDS=25V, f=1MHz 2
Gate resistance Rg 3.5 4.4 6.6 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 9.5 11 nC VGS=10V, VDS=480V, ID=2A 2
Gate Source Charge Qgs 1.9 2 nC VGS=10V, VDS=480V, ID=2A 2
Gate Drain Charge Qgd 4.7 6 nC VGS=10V, VDS=480V, ID=2A 2
Turn-On DelayTime tD(on) 17.2 21 ns VGS=10V, VDS=300V, ID=2A, RG=25Ω 2
Turn-On Rise Time tr 14.3 17 ns VGS=10V, VDS=300V, ID=2A, RG=25Ω 2
Turn-Off DelayTime tD(off) 27 32 ns VGS=10V, VDS=300V, ID=2A, RG=25Ω 2
Turn-Off Fall Time tf 17 20 ns VGS=10V, VDS=300V, ID=2A, RG=25Ω 2
Body Diode Reverse Recovery Time trr 154 185 ns IF=2A,dI/dt=100A/µs,VDS=100V 2
Body Diode Reverse Recovery Charge Qrr 0.8 0.96 µC IF=2A,dI/dt=100A/µs,VDS=100V 2
Drain-Source Voltage VDS 600 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 2 A TC=25°C 1
Continuous Drain Current ID 1.4 A TC=100°C 1
Pulsed Drain Current IDM 8 A 1
Avalanche Current IAR 2 A 1
Repetitive avalanche energy EAR 60 mJ 1
Single pulsed avalanche energy EAS 120 mJ 1
Peak diode recovery dv/dt dv/dt 5 V/ns 1
Power Dissipation PD 56.8 W TC=25°C 1
Derate above 25°C 0.45 W/°C 1
Junction and Storage Temperature Range TJ, TSTG -50 150 °C 1
Maximum lead temperature for soldering TL 300 °C 1/8" from case for 5 seconds 1
Maximum Junction-to-Ambient RθJA 55 °C/W Note A, still air, TA=25°C 1
Maximum Junction-to-Case RθJC 1.8 2.2 °C/W 1

CAD (KiCad official)

  • Symbol: AOD2N60
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod2n60-etched.step / aod2n60-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod2n60.step / aod2n60.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256 8d683006cd059363, retrieved 2026-11-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF