component
HXY2302AI
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHXY2302AI
HXY MOSFET · MOSFETs · SOT-23
HXY2302AI from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12V, with RDS(ON) specified at VGS=2.5V and 4.5V and threshold of 0.5V min to 1.2V max at 250μA. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous drain current is 3A and diode forward current IS is 3.3A max. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is 20V max, continuous current 3A and pulsed current 16A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 28 | 40 | mΩ | VGS=2.5V, ID=2.8A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 23 | 35 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Total Gate Charge | Qg | 2.9 | 5 | nC | VDS=10V,ID=3A, VGS=4.5V | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1.2 | V | VGS=0V,IS=3.3A | 2 | |
| Diode Forward Current | IS | 3.3 | A | 2 | |||
| Drain-Source Voltage | VDS | 20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃; printed as ±12 | 1 | |
| Drain Current-Continuous | ID | 3 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 16 | A | Repetitive, pulse width limited by max junction temperature (Note 1) | 1 | ||
| Maximum Power Dissipation | PD | 0.9 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 139 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
HXY2302AI - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hxy2302ai-etched.step/hxy2302ai-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy2302ai.step/hxy2302ai.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
5f5b72698d394ab0, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).