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HXY2302AI

HXY MOSFET · MOSFETs · SOT-23

HXY2302AI from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±12V, with RDS(ON) specified at VGS=2.5V and 4.5V and threshold of 0.5V min to 1.2V max at 250μA.
2 S passive Source of the N-channel MOSFET; continuous drain current is 3A and diode forward current IS is 3.3A max.
3 D passive Drain of the N-channel MOSFET; drain-source voltage is 20V max, continuous current 3A and pulsed current 16A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 22 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.75 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 28 40 mΩ VGS=2.5V, ID=2.8A 2
Drain-Source On-State Resistance RDS(ON) 23 35 mΩ VGS=4.5V, ID=3A 2
Total Gate Charge Qg 2.9 5 nC VDS=10V,ID=3A, VGS=4.5V 2
Diode Forward Voltage VSD 0.75 1.2 V VGS=0V,IS=3.3A 2
Diode Forward Current IS 3.3 A 2
Drain-Source Voltage VDS 20 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃; printed as ±12 1
Drain Current-Continuous ID 3 A TA=25℃ 1
Drain Current-Pulsed IDM 16 A Repetitive, pulse width limited by max junction temperature (Note 1) 1
Maximum Power Dissipation PD 0.9 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 139 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) 1

CAD (KiCad official)

  • Symbol: HXY2302AI
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hxy2302ai-etched.step / hxy2302ai-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy2302ai.step / hxy2302ai.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 5f5b72698d394ab0, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF