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STP15N60M2-EP
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP15N60M2-EP
STMicroelectronics · MOSFETs · TO-220
STP15N60M2-EP from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the gate-source voltage is rated at ±25 V (VGS). |
| 2 | D | passive | Drain terminal, also connected to the metal tab; rated 600 V VDS with continuous drain current of 11 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; source-drain diode current is rated 11 A continuous and 44 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 | 25 | V | 3 | ||
| Drain current (continuous) | ID | 11 | A | TC = 25 °C | 3 | ||
| Drain current (continuous) | ID | 7 | A | TC = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 44 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 110 | W | TC = 25 °C | 3 | ||
| Peak diode recovery voltage slope | dv/dt(2) | 15 | V/ns | ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V | 3 | ||
| MOSFET dv/dt ruggedness | dv/dt(3) | 50 | V/ns | VDS ≤ 480 V | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Thermal resistance junction-case | Rthj-case | 1.14 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | 3 | |||
| Avalanche current, repetitive or not repetitive | IAR | 2.8 | A | Pulse width limited by Tjmax | 3 | ||
| Single pulse avalanche energy | EAS | 125 | mJ | Starting Tj = 25 °C, ID = IAR; VDD = 50 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS = 0 V, ID = 1 mA | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 600 V | 4 | ||
| Zero gate voltage drain current | IDSS | 100 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C | 4 | ||
| Gate-body leakage current | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ±25 V | 4 | |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) | 0.34 | 0.378 | Ω | VGS = 10 V, ID = 5.5 A | 4 | |
| Source-drain current | ISD | 11 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 44 | A | Pulse width is limited by safe operating area | 5 | ||
| Forward on voltage | VSD | 1.6 | V | VGS = 0 V, ISD = 11 A | 5 | ||
| Input capacitance | Ciss | 590 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 | ||
| Output capacitance | Coss | 30 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 | ||
| Reverse transfer capacitance | Crss | 1.1 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 | ||
| Equivalent output capacitance | Coss eq. | 148 | pF | VDS = 0 to 480 V, VGS = 0 V | 4 | ||
| Intrinsic gate resistance | RG | 7 | Ω | f = 1 MHz, ID = 0 A | 4 | ||
| Total gate charge | Qg | 17 | nC | VDD = 480 V, ID = 11 A, VGS = 10 V | 4 | ||
| Gate-source charge | Qgs | 3.1 | nC | VDD = 480 V, ID = 11 A, VGS = 10 V | 4 | ||
| Gate-drain charge | Qgd | 7.3 | nC | VDD = 480 V, ID = 11 A, VGS = 10 V | 4 | ||
| Turn-off energy | E(off) | 4.7 | µJ | VDD = 400 V, ID = 1.5 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Turn-off energy | E(off) | 5.2 | µJ | VDD = 400 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Turn-on delay time | td(on) | 11 | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 | ||
| Rise time | tr | 10 | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 | ||
| Turn-off delay time | td(off) | 40 | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 | ||
| Fall time | tf | 15 | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 | ||
| Reverse recovery time | trr | 280 | ns | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery charge | Qrr | 2.7 | µC | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery current | IRRM | 19.5 | A | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery time | trr | 400 | ns | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 | ||
| Reverse recovery charge | Qrr | 3.8 | µC | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 | ||
| Reverse recovery current | IRRM | 19 | A | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 |
CAD (KiCad official)
- Symbol:
STP15N60M2-EP - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stp15n60m2-ep-etched.step/stp15n60m2-ep-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp15n60m2-ep.step/stp15n60m2-ep.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (14 pp, sha256
28c58471c655050c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).