component
AOD3N80-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD3N80-VB
VBsemi Elec · MOSFETs · TO-252
AOD3N80-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with a gate-source threshold of 2.0 to 4.0 V and an absolute maximum VGS of ±30 V. |
| 2 | D | passive | Drain, connected to the tab; the drain-source voltage is rated at 800 V and the continuous drain current is 2.8 A at TC = 25 °C. |
| 3 | S | passive | Source; the continuous source-drain body diode current is 2.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 800 | V | 1 | |||
| Gate-source voltage | VGS | -30 | 30 | V | Printed as ± 30 V | 1 | |
| Continuous drain current | ID | 2.8 | A | TJ = 150 °C, TC = 25 °C, VGS at 10 V | 1 | ||
| Continuous drain current | ID | 1.8 | A | TJ = 150 °C, TC = 100 °C, VGS at 10 V | 1 | ||
| Pulsed drain current | IDM | 5 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Linear derating factor | 0.5 | W/°C | 1 | ||||
| Single pulse avalanche energy | EAS | 14 | mJ | VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 0.9 A | 1 | ||
| Maximum power dissipation | PD | 62.5 | W | 1 | |||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-source voltage slope | dV/dt | 70 | V/ns | TJ = 125 °C | 1 | ||
| Reverse diode dV/dt | dV/dt | 0.13 | ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C | 1 | |||
| Soldering recommendations (peak temperature) | 300 | °C | For 10 s, 1.6 mm from case | 1 | |||
| Maximum junction-to-ambient thermal resistance | RthJA | 62 | °C/W | 2 | |||
| Maximum junction-to-case (drain) thermal resistance | RthJC | 2 | °C/W | 2 | |||
| Drain-source breakdown voltage | VDS | 800 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage (N) | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Gate-source leakage | IGSS | -1 | 1 | μA | VGS = ± 30 V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 800 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 10 | μA | VDS = 640 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Total gate charge | Qg | 9.8 | 19.6 | nC | VGS = 10 V, ID = 1.0 A, VDS = 480 V | 2 | |
| Turn-on delay time | td(on) | 11 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 | ||
| Rise time | tr | 7 | 14 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Turn-off delay time | td(off) | 19 | 38 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Fall time | tf | 27 | 54 | ns | VDD = 480 V, ID = 1.0 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Gate input resistance | Rg | 1.8 | 3.6 | 7.2 | Ω | f = 1 MHz, open drain | 2 |
| Continuous source-drain diode current | IS | 2.8 | A | 2 | |||
| Pulsed diode forward current | ISM | -5 | A | 2 | |||
| Diode forward voltage | VSD | 1.2 | V | TJ = 25 °C, IS = 11 A, VGS = 0 V | 2 | ||
| Reverse recovery charge | Qrr | 0.9 | 1.8 | μC | TJ = 25 °C, IF = IS = 1.0 A, dI/dt = 100 A/μs, VR = 25 V | 2 | |
| Reverse recovery time | trr | 278 | ns | TJ = 25 °C, IF = IS = 1.0 A, dI/dt = 100 A/μs, VR = 25 V | 2 |
CAD (KiCad official)
- Symbol:
AOD3N80-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod3n80-vb-etched.step/aod3n80-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod3n80-vb.step/aod3n80-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
ba9399ec0e875d10, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).