component
FGY75T120SQDN
Public Made by Adomby adom
onsemi IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFGY75T120SQDN
onsemi · IGBT Transistors / Modules · TO-247-3
FGY75T120SQDN from onsemi, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-emitter voltage is rated ±20 V continuous and ±30 V transient, with a typical threshold of 5.5 V (4.5 to 6.5 V). |
| 2 | C | passive | Collector (also the co-packaged diode cathode); collector-to-emitter voltage is rated 1200 V and collector current is 150 A at TC = 25°C and 75 A at TC = 100°C. |
| 3 | E | passive | Emitter (also the co-packaged diode anode); it is the main current return terminal, and the gate drive is referenced to it. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | 1200 | V | 1 | |||
| Gate to Emitter Voltage | VGES | -20 | 20 | V | 1 | ||
| Transient Gate to Emitter Voltage | VGES | -30 | 30 | V | Transient | 1 | |
| Collector Current | IC | 150 | A | TC = 25°C | 1 | ||
| Collector Current | IC | 75 | A | TC = 100°C | 1 | ||
| Pulsed Collector Current | ILM | 300 | A | TC = 25°C | 1 | ||
| Diode Forward Current | IF | 150 | A | TC = 25°C | 1 | ||
| Diode Forward Current | IF | 75 | A | TC = 100°C | 1 | ||
| Pulsed Diode Max. Forward Current | IFM | 300 | A | 1 | |||
| Maximum Power Dissipation | PD | 790 | W | TC = 25°C | 1 | ||
| Maximum Power Dissipation | PD | 395 | W | TC = 100°C | 1 | ||
| Operating Junction Temperature | TJ | -55 | 175 | °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 175 | °C | 1 | ||
| Maximum Lead Temp. for Soldering Purposes | TL | 300 | °C | 1/8 in from case for 5 s | 1 | ||
| Thermal Resistance, Junction to Case (IGBT) | RJC | 0.19 | °C/W | Max. | 2 | ||
| Thermal Resistance, Junction to Case (Diode) | RJC | 0.38 | °C/W | Max. | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 40 | °C/W | Max. | 2 | ||
| Collector to Emitter Breakdown Voltage | BVCES | 1200 | V | VGE = 0 V, IC = 500 A | 2 | ||
| Collector Cut-Off Current | ICES | 400 | A | VCE = VCES, VGE = 0 V | 2 | ||
| G-E Leakage Current | IGES | -200 | 200 | nA | VGE = VGES, VCE = 0 V | 2 | |
| G-E Threshold Voltage | VGE(th) | 4.5 | 5.5 | 6.5 | V | IC = 400 A, VCE = VGE | 2 |
| Collector to Emitter Saturation Voltage | VCE(sat) | 1.7 | 1.95 | V | IC = 75 A, VGE = 15 V | 2 | |
| Diode Forward Voltage | VFM | 3.4 | 4 | V | IF = 75 A, TC = 25°C | 3 |
CAD (KiCad official)
- Symbol:
FGY75T120SQDN - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
fgy75t120sqdn-etched.step/fgy75t120sqdn-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fgy75t120sqdn.step/fgy75t120sqdn.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
a5895b643bd9f6c0, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).