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Contents

README

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FGY75T120SQDN

onsemi · IGBT Transistors / Modules · TO-247-3

FGY75T120SQDN from onsemi, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-emitter voltage is rated ±20 V continuous and ±30 V transient, with a typical threshold of 5.5 V (4.5 to 6.5 V).
2 C passive Collector (also the co-packaged diode cathode); collector-to-emitter voltage is rated 1200 V and collector current is 150 A at TC = 25°C and 75 A at TC = 100°C.
3 E passive Emitter (also the co-packaged diode anode); it is the main current return terminal, and the gate drive is referenced to it.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Emitter Voltage VCES 1200 V 1
Gate to Emitter Voltage VGES -20 20 V 1
Transient Gate to Emitter Voltage VGES -30 30 V Transient 1
Collector Current IC 150 A TC = 25°C 1
Collector Current IC 75 A TC = 100°C 1
Pulsed Collector Current ILM 300 A TC = 25°C 1
Diode Forward Current IF 150 A TC = 25°C 1
Diode Forward Current IF 75 A TC = 100°C 1
Pulsed Diode Max. Forward Current IFM 300 A 1
Maximum Power Dissipation PD 790 W TC = 25°C 1
Maximum Power Dissipation PD 395 W TC = 100°C 1
Operating Junction Temperature TJ -55 175 °C 1
Storage Temperature Range Tstg -55 175 °C 1
Maximum Lead Temp. for Soldering Purposes TL 300 °C 1/8 in from case for 5 s 1
Thermal Resistance, Junction to Case (IGBT) RJC 0.19 °C/W Max. 2
Thermal Resistance, Junction to Case (Diode) RJC 0.38 °C/W Max. 2
Thermal Resistance, Junction to Ambient RJA 40 °C/W Max. 2
Collector to Emitter Breakdown Voltage BVCES 1200 V VGE = 0 V, IC = 500 A 2
Collector Cut-Off Current ICES 400 A VCE = VCES, VGE = 0 V 2
G-E Leakage Current IGES -200 200 nA VGE = VGES, VCE = 0 V 2
G-E Threshold Voltage VGE(th) 4.5 5.5 6.5 V IC = 400 A, VCE = VGE 2
Collector to Emitter Saturation Voltage VCE(sat) 1.7 1.95 V IC = 75 A, VGE = 15 V 2
Diode Forward Voltage VFM 3.4 4 V IF = 75 A, TC = 25°C 3

CAD (KiCad official)

  • Symbol: FGY75T120SQDN
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: fgy75t120sqdn-etched.step / fgy75t120sqdn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fgy75t120sqdn.step / fgy75t120sqdn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 a5895b643bd9f6c0, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF