component
GBI1430SMAR
Public Made by Adomby adom
GOSEMICON DC-DC Converters, ESOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGBI1430SMAR
GOSEMICON · DC-DC Converters · ESOP-8
GBI1430SMAR from GOSEMICON, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BOOT | input | Power supply for the high-side power MOSFET gate driver; a 0.1uF or greater ceramic capacitor must be connected between BOOT and SW, and the BOOT-to-SW rating is 6V recommended, 6.5V absolute maximum. |
| 2 | VIN | power_in | Power supply input for the device, operating from 4.0V to 40V, which must be locally bypassed. |
| 3 | EN | input | Enable logic input with precision thresholds of 1.21V rising and 1.05V falling; floating the pin enables the device, and it tolerates voltages up to VIN (40V max). |
| 4 | RT | input | Resistor timing pin that sets the switching frequency (200kHz to 2.5MHz) through a resistor to GND, and must not be left floating or shorted to GND. |
| 5 | FB | input | Feedback sense input that the regulator holds at the internal 0.8V reference (0.79V to 0.81V), with the output set by a resistor divider from VOUT to FB and FB to GND. |
| 6 | SS | input | Soft-start pin where a capacitor to GND sets the soft-start time, charged by a 4uA soft-start current. |
| 7 | GND | power_in | Ground reference for the device. |
| 8 | SW | output | Switching node of the buck converter, with absolute maximum rating of -3V to 42V to GND, requiring an external catch diode between SW and GND. |
| 9 | Thermal Pad | power_in | Exposed thermal pad that must be grounded in the PCB layout and connected to GND for thermal dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOSEMICON |
| Package | ESOP-8 |
| Category | Power Management (PMIC) |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input Voltage VIN, EN to GND | -0.3 | 42 | V | 3 | |||
| Input Voltage FB to GND | -0.3 | 6.5 | V | 3 | |||
| Input Voltage SS to GND | -0.3 | 6.5 | V | 3 | |||
| Input Voltage RT to GND | -0.3 | 6.5 | V | 3 | |||
| Output Voltage SW to GND | -3 | 42 | V | 3 | |||
| Output Voltage BOOT to SW | 6.5 | V | 3 | ||||
| Junction temperature | TJ | -40 | 150 | °C | 3 | ||
| Storage temperature | TSTG | -65 | 150 | °C | 3 | ||
| ESD Human Body Model (HBM), all pins | VESD | -1500 | 1500 | V | Per ANSI-JEDEC-JS-001-2014, all pins | 3 | |
| ESD Charged Device Model (CDM), all pins | VESD | -1000 | 1000 | V | Per ANSI-JEDEC-JS-002-2014, all pins | 3 | |
| VIN Supply voltage range | VIN | 4 | 40 | V | 3 | ||
| BOOT to SW | 0 | 6 | V | 3 | |||
| FB, PG | 0 | 6 | V | 3 | |||
| EN | 0 | 40 | V | 3 | |||
| Switching frequency range at RT mode | fSW | 200 | 2500 | kHz | 3 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 3 | ||
| Operating input voltage | VIN | 4 | 40 | V | 4 | ||
| Input UVLO, VIN rising | VIN_UVLO | 3.6 | 3.8 | V | VIN rising | 4 | |
| Shutdown current | ISHDN | 1 | 4 | uA | EN=0, No load, 4.0V≤VIN≤40V | 4 | |
| Enable high threshold | VEN_H | 1.17 | 1.21 | 1.25 | V | 4 | |
| Feedback Voltage | VFB | 0.79 | 0.8 | 0.81 | V | 4 | |
| High side FET on-resistance | RDSON_H | 57 | 80 | 142 | mΩ | 4 | |
| Switching frequency | fSW | 460 | 500 | 540 | KHz | RT=200k | 4 |
| Maximum switching frequency | 2.5 | MHz | 4 | ||||
| Maximum duty cycle | DMAX | 95 | % | fSW=500kHz | 4 | ||
| HSD peak current limit | ILIM_HSD | 4.5 | 5 | 5.5 | A | VIN=24V | 4 |
| Enable low threshold | VEN_L | 1.05 | V | 4 | |||
| Input UVLO hysteresis | 350 | mV | 4 | ||||
| Quiescent current | IQ | 100 | uA | EN=floating, No load, No switch, 4.0V≤VIN≤40V, BOOT-SW=5V | 4 | ||
| Minimum on-time | tON_MIN | 100 | ns | 4 | |||
| Soft start current | ISS | 4 | uA | GBI1430 | 4 | ||
| Thermal shutdown threshold | 170 | °C | 5 | ||||
| Thermal shutdown hysteresis | 30 | °C | 5 | ||||
| Output over voltage protection rising | VOVP_H | 109 | % | 5 | |||
| Output over voltage protection falling | VOVP_L | 105 | % | 5 | |||
| Output under voltage protection falling | VUVP_L | 90 | % | 5 | |||
| Output under voltage protection rising | VUVP_H | 95 | % | 5 | |||
| Junction to ambient thermal resistance (eSOP-8L) | RθJA | 42.5 | °C/W | 4 | |||
| Junction to case (top) thermal resistance (eSOP-8L) | RθJC_top | 56.1 | °C/W | 4 | |||
| Junction to case (bottom) thermal resistance (eSOP-8L) | RθJC_bot | 3.8 | °C/W | 4 | |||
| Junction to board characterization parameter (eSOP-8L) | ψJB | 25.4 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
GBI1430SMAR - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm - 3D model: ESOP-8 (KiCad packages3D, STEP)
- 3D model files:
gbi1430smar-etched.step/gbi1430smar-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gbi1430smar.step/gbi1430smar.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOSEMICON datasheet (20 pp, sha256
b17c71a306d2a873, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).