component
HY1210D
Public Made by Adomby adom
HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHY1210D
HUAYI · MOSFETs · TO-252-2L
HY1210D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V with a threshold of 1.0 to 3.0 V (VDS=VGS, IDS=250uA). |
| 2 | D | passive | Drain (exposed tab, middle lead absent in the 2L package); drain-source voltage is rated at 100 V and continuous drain current is 26 A at Tc=25°C. |
| 3 | S | passive | Source; the body diode forward voltage is 0.8 V typ. and 1.3 V max. at ISD=10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | Common ratings, Tc=25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Drain Current-Continuous | IS | 26 | A | Tc=25°C, mounted on large heat sink | 2 | ||
| Pulsed Drain Current | IDM | 100 | A | Tc=25°C, repetitive rating, pulse width limited by max junction temperature | 2 | ||
| Continuous Drain Current | ID | 26 | A | Tc=25°C | 2 | ||
| Continuous Drain Current | ID | 17 | A | Tc=100°C | 2 | ||
| Maximum Power Dissipation | PD | 50 | W | Tc=25°C | 2 | ||
| Maximum Power Dissipation | PD | 20 | W | Tc=100°C | 2 | ||
| Single Pulsed-Avalanche Energy | EAS | 108 | mJ | L=0.3mH | 2 | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.5 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 110 | °C/W | Surface mounted on a square inches Cu board (copper area value missing in datasheet text) | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V,IDS=250uA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=100V, VGS=0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 30 | uA | TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS=VGS, IDS=250uA | 2 |
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 32 | 36 | mΩ | VGS=10V,IDS=10A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 34 | 38 | mΩ | VGS=4.5V,IDS=10A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.3 | V | ISD=10A,VGS=0V | 2 | |
| Reverse Recovery Time | trr | 21 | ns | ISD=13A,dISD/dt=100A/us | 2 | ||
| Reverse Recovery Charge | Qrr | 52 | nC | ISD=13A,dISD/dt=100A/us | 2 | ||
| Gate Resistance | RG | 1.7 | Ω | VGS=0V,VDS=0V,F=1MHz | 3 | ||
| Input Capacitance | Ciss | 2543 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 | ||
| Output Capacitance | Coss | 38 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 5.8 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 | ||
| Turn-on Delay Time | td(ON) | 11 | ns | VDD=50V,RG=3Ω, IDS=13A,VGS=10V | 3 | ||
| Turn-on Rise Time | Tr | 8 | ns | VDD=50V,RG=3Ω, IDS=13A,VGS=10V | 3 | ||
| Turn-off Delay Time | td(OFF) | 24 | ns | VDD=50V,RG=3Ω, IDS=13A,VGS=10V | 3 | ||
| Turn-off Fall Time | Tf | 13 | ns | VDD=50V,RG=3Ω, IDS=13A,VGS=10V | 3 | ||
| Total Gate Charge | Qg | 72 | nC | VDS=80V, VGS=10V, ID=13A | 3 | ||
| Gate-Source Charge | Qgs | 8 | nC | VDS=80V, VGS=10V, ID=13A | 3 | ||
| Gate-Drain Charge | Qgd | 14 | nC | VDS=80V, VGS=10V, ID=13A | 3 |
CAD (KiCad official)
- Symbol:
HY1210D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hy1210d-etched.step/hy1210d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hy1210d.step/hy1210d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAYI datasheet (11 pp, sha256
79a3b907b71f9697, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).