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HY1210D

Public Made by Adom

by adom

HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HY1210D

HUAYI · MOSFETs · TO-252-2L

HY1210D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V with a threshold of 1.0 to 3.0 V (VDS=VGS, IDS=250uA).
2 D passive Drain (exposed tab, middle lead absent in the 2L package); drain-source voltage is rated at 100 V and continuous drain current is 26 A at Tc=25°C.
3 S passive Source; the body diode forward voltage is 0.8 V typ. and 1.3 V max. at ISD=10A.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V Common ratings, Tc=25°C 2
Gate-Source Voltage VGSS -20 20 V 2
Maximum Junction Temperature TJ 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Drain Current-Continuous IS 26 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM 100 A Tc=25°C, repetitive rating, pulse width limited by max junction temperature 2
Continuous Drain Current ID 26 A Tc=25°C 2
Continuous Drain Current ID 17 A Tc=100°C 2
Maximum Power Dissipation PD 50 W Tc=25°C 2
Maximum Power Dissipation PD 20 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 108 mJ L=0.3mH 2
Thermal Resistance, Junction-to-Case RJC 2.5 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 110 °C/W Surface mounted on a square inches Cu board (copper area value missing in datasheet text) 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V,IDS=250uA 2
Drain-to-Source Leakage Current IDSS 1 uA VDS=100V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 30 uA TJ=85°C 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS=VGS, IDS=250uA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 32 36 mΩ VGS=10V,IDS=10A 2
Drain-Source On-state Resistance RDS(ON) 34 38 mΩ VGS=4.5V,IDS=10A 2
Diode Forward Voltage VSD 0.8 1.3 V ISD=10A,VGS=0V 2
Reverse Recovery Time trr 21 ns ISD=13A,dISD/dt=100A/us 2
Reverse Recovery Charge Qrr 52 nC ISD=13A,dISD/dt=100A/us 2
Gate Resistance RG 1.7 Ω VGS=0V,VDS=0V,F=1MHz 3
Input Capacitance Ciss 2543 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Output Capacitance Coss 38 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Reverse Transfer Capacitance Crss 5.8 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Turn-on Delay Time td(ON) 11 ns VDD=50V,RG=3Ω, IDS=13A,VGS=10V 3
Turn-on Rise Time Tr 8 ns VDD=50V,RG=3Ω, IDS=13A,VGS=10V 3
Turn-off Delay Time td(OFF) 24 ns VDD=50V,RG=3Ω, IDS=13A,VGS=10V 3
Turn-off Fall Time Tf 13 ns VDD=50V,RG=3Ω, IDS=13A,VGS=10V 3
Total Gate Charge Qg 72 nC VDS=80V, VGS=10V, ID=13A 3
Gate-Source Charge Qgs 8 nC VDS=80V, VGS=10V, ID=13A 3
Gate-Drain Charge Qgd 14 nC VDS=80V, VGS=10V, ID=13A 3

CAD (KiCad official)

  • Symbol: HY1210D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hy1210d-etched.step / hy1210d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hy1210d.step / hy1210d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (11 pp, sha256 79a3b907b71f9697, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF