component
FDS6681Z
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS6681Z
onsemi · MOSFETs · SO-8
FDS6681Z from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; source-drain diode continuous forward current is -2.1 A (IS) per the datasheet. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; source-drain diode continuous forward current is -2.1 A (IS) per the datasheet. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; source-drain diode continuous forward current is -2.1 A (IS) per the datasheet. |
| 4 | G | input | Gate terminal; VGSS is ±25 V, and the internal gate-source diode is ESD protection only with no gate overvoltage rating implied. |
| 5 | D | passive | Drain terminal; VDSS is -30 V and continuous drain current is -20 A at TA = 25°C (Note 1a). |
| 6 | D | passive | Drain terminal; VDSS is -30 V and continuous drain current is -20 A at TA = 25°C (Note 1a). |
| 7 | D | passive | Drain terminal; VDSS is -30 V and continuous drain current is -20 A at TA = 25°C (Note 1a). |
| 8 | D | passive | Drain terminal; VDSS is -30 V and continuous drain current is -20 A at TA = 25°C (Note 1a). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 2 | ||
| Drain Current – Continuous | ID | -20 | A | Note 1a | 2 | ||
| Drain Current – Pulsed | ID | -105 | A | 2 | |||
| Power Dissipation for Single Operation | PD | 2.5 | W | Note 1a | 2 | ||
| Power Dissipation for Single Operation | PD | 1.2 | W | Note 1b | 2 | ||
| Power Dissipation for Single Operation | PD | 1 | W | Note 1c | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain–Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0 V, ID = –250 µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = –24 V, VGS = 0 V | 3 | ||
| Gate–Body Leakage | IGSS | -10 | 10 | µA | VGS = ±25 V, VDS = 0 V | 3 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS = VGS, ID = –250 µA | 3 |
| Static Drain–Source On–Resistance | RDS(on) | 3.8 | 4.6 | mΩ | VGS = –10 V, ID = –20 A | 3 | |
| Static Drain–Source On–Resistance | RDS(on) | 5.2 | 6.5 | mΩ | VGS = –4.5 V, ID = –17 A | 3 | |
| Static Drain–Source On–Resistance | RDS(on) | 5 | 6.3 | mΩ | VGS = –10 V, ID = –20 A, TJ=125°C | 3 | |
| Turn–On Delay Time | td(on) | 20 | 35 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 3 | |
| Turn–On Rise Time | tr | 9 | 18 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 3 | |
| Turn–Off Delay Time | td(off) | 660 | 1060 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 3 | |
| Turn–Off Fall Time | tf | 380 | 610 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 3 | |
| Total Gate Charge at VGS = –10V | Qg(TOT) | 185 | 260 | nC | VDS = –15 V, ID = –20 A | 3 | |
| Total Gate Charge at VGS = –5V | Qg(TOT) | 105 | 150 | nC | VDS = –15 V, ID = –20 A | 3 | |
| Maximum Continuous Drain–Source Diode Forward Current | IS | -2.1 | A | 4 | |||
| Drain–Source Diode Forward Voltage | VSD | -0.7 | -1.2 | V | VGS = 0 V, IS = –2.1 A (Note 2) | 4 | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | °C/W | Note 1a (10 sec) | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 25 | °C/W | Note 1 | 2 |
CAD (KiCad official)
- Symbol:
FDS6681Z - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds6681z-etched.step/fds6681z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds6681z.step/fds6681z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
9d8e68bffcc1155a, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).