component
HUS1GE35AT
Public Made by Adomby adom
HXY MOSFET Fast Recovery / High Efficiency Diodes, SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownHUS1GE35AT
HXY MOSFET · Fast Recovery / High Efficiency Diodes · SMA
HUS1GE35AT from HXY MOSFET, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the color band on the package; the datasheet states 'Polarity: Color band denotes cathode'. |
| 2 | A | passive | Anode of the US1G high efficient rectifier diode (1A average forward current, 400V repetitive peak reverse voltage), the end opposite the color band. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 400 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 280 | V | 1 | |||
| Average Forward Current | IF(AV) | 1 | A | 60Hz Half-sine wave, Resistance load, TL=75℃ | 1 | ||
| Surge (Non-repetitive) Forward Current | IFSM | 30 | A | 60Hz Half-sine wave, 1 cycle, Ta=25℃ | 1 | ||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Peak Forward Voltage | VF | 1.3 | V | IF=1.0A | 1 | ||
| Peak Reverse Current | IRRM1 | 5 | μA | Ta=25℃, VRM=VRRM | 1 | ||
| Peak Reverse Current | IRRM2 | 50 | μA | Ta=125℃, VRM=VRRM | 1 | ||
| Maximum reverse recovery time | trr | 50 | ns | IF=0.5A, IR=1.0A, Irr=0.25A | 1 | ||
| Thermal Resistance junction to ambient | RθJ-A | 55 | ℃/W | Between junction and ambient | 1 | ||
| Thermal Resistance junction to terminal | RθJ-L | 25 | ℃/W | Between junction and terminal | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas | 1 |
CAD (KiCad official)
- Symbol:
HUS1GE35AT - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
hus1ge35at-etched.step/hus1ge35at-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hus1ge35at.step/hus1ge35at.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
cba78eca77a64dd1, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).