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HUS1GE35AT

HXY MOSFET · Fast Recovery / High Efficiency Diodes · SMA

HUS1GE35AT from HXY MOSFET, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode, marked by the color band on the package; the datasheet states 'Polarity: Color band denotes cathode'.
2 A passive Anode of the US1G high efficient rectifier diode (1A average forward current, 400V repetitive peak reverse voltage), the end opposite the color band.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SMA
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 400 V 1
Maximum RMS Voltage VRMS 280 V 1
Average Forward Current IF(AV) 1 A 60Hz Half-sine wave, Resistance load, TL=75℃ 1
Surge (Non-repetitive) Forward Current IFSM 30 A 60Hz Half-sine wave, 1 cycle, Ta=25℃ 1
Operation Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Peak Forward Voltage VF 1.3 V IF=1.0A 1
Peak Reverse Current IRRM1 5 μA Ta=25℃, VRM=VRRM 1
Peak Reverse Current IRRM2 50 μA Ta=125℃, VRM=VRRM 1
Maximum reverse recovery time trr 50 ns IF=0.5A, IR=1.0A, Irr=0.25A 1
Thermal Resistance junction to ambient RθJ-A 55 ℃/W Between junction and ambient 1
Thermal Resistance junction to terminal RθJ-L 25 ℃/W Between junction and terminal 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas 1

CAD (KiCad official)

  • Symbol: HUS1GE35AT
  • Footprint: Diode_SMD:D_SMA
  • 3D model: SMA (KiCad packages3D, STEP)
  • 3D model files: hus1ge35at-etched.step / hus1ge35at-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hus1ge35at.step / hus1ge35at.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 cba78eca77a64dd1, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF