# HUS1GE35AT

**HXY MOSFET** · Fast Recovery / High Efficiency Diodes · SMA

HUS1GE35AT from HXY MOSFET, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the color band on the package; the datasheet states 'Polarity: Color band denotes cathode'. |
| 2 | A | passive | Anode of the US1G high efficient rectifier diode (1A average forward current, 400V repetitive peak reverse voltage), the end opposite the color band. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM |  |  | 400 | V |  | 1 |
| Maximum RMS Voltage | VRMS |  |  | 280 | V |  | 1 |
| Average Forward Current | IF(AV) |  |  | 1 | A | 60Hz Half-sine wave, Resistance load, TL=75℃ | 1 |
| Surge (Non-repetitive) Forward Current | IFSM |  |  | 30 | A | 60Hz Half-sine wave, 1 cycle, Ta=25℃ | 1 |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Peak Forward Voltage | VF |  |  | 1.3 | V | IF=1.0A | 1 |
| Peak Reverse Current | IRRM1 |  |  | 5 | μA | Ta=25℃, VRM=VRRM | 1 |
| Peak Reverse Current | IRRM2 |  |  | 50 | μA | Ta=125℃, VRM=VRRM | 1 |
| Maximum reverse recovery time | trr |  |  | 50 | ns | IF=0.5A, IR=1.0A, Irr=0.25A | 1 |
| Thermal Resistance junction to ambient | RθJ-A |  | 55 |  | ℃/W | Between junction and ambient | 1 |
| Thermal Resistance junction to terminal | RθJ-L |  | 25 |  | ℃/W | Between junction and terminal | 1 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper |  | Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas | 1 |

## CAD (KiCad official)

- Symbol: `HUS1GE35AT`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA (KiCad packages3D, STEP)
- 3D model files: `hus1ge35at-etched.step` / `hus1ge35at-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hus1ge35at.step` / `hus1ge35at.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hus1ge35at-datasheet.pdf) (4 pp, sha256 `cba78eca77a64dd1`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hus1ge35at-datasheet.pdf)