component
SI4816DY-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Symbol & Footprint
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Datasheet
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README
markdownSI4816DY-T1-E3-VB
VBsemi Elec · MOSFETs · SO-8
SI4816DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of N-Channel 1 MOSFET (Channel-1), VGS rated ±16 V. |
| 2 | S2 | passive | Source of N-Channel 2 MOSFET (Channel-2, with Schottky diode). |
| 3 | S2 | passive | Source of N-Channel 2 MOSFET (Channel-2, with Schottky diode), tied to the other S2 pin. |
| 4 | G2 | input | Gate of N-Channel 2 MOSFET (Channel-2), VGS rated ±16 V. |
| 5 | S1/D2 | passive | Common node: source of Channel-1 and drain of Channel-2 (Schottky diode connected here), VDS 30 V max. |
| 6 | S1/D2 | passive | Common node: source of Channel-1 and drain of Channel-2 (Schottky diode connected here), VDS 30 V max. |
| 7 | S1/D2 | passive | Common node: source of Channel-1 and drain of Channel-2 (Schottky diode connected here), VDS 30 V max. |
| 8 | D1 | passive | Drain of N-Channel 1 MOSFET (Channel-1), VDS 30 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage Ch-1 | VDS | 30 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Drain-Source Breakdown Voltage Ch-2 | VDS | 30 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Gate Threshold Voltage Ch-1 | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 1 mA | 2 | |
| Gate Threshold Voltage Ch-2 | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 1 mA | 2 | |
| Gate-Body Leakage Ch-1 | IGSS | 100 | µA | VDS = 0 V, VGS = ± 16 V | 2 | ||
| Gate-Body Leakage Ch-2 | IGSS | 100 | µA | VDS = 0 V, VGS = ± 16 V | 2 | ||
| Zero Gate Voltage Drain Current Ch-1 | IDSS | 0.001 | mA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current Ch-2 | IDSS | 0.05 | 0.5 | mA | VDS = 30 V, VGS = 0 V | 2 | |
| Zero Gate Voltage Drain Current Ch-1 hot | IDSS | 0.025 | mA | VDS = 30 V, VGS = 0 V, TJ = 100 °C | 2 | ||
| Zero Gate Voltage Drain Current Ch-2 hot | IDSS | 3 | 15 | mA | VDS = 30 V, VGS = 0 V, TJ = 100 °C | 2 | |
| On-State Drain Current Ch-1 | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current Ch-2 | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance Ch-1 | RDS(on) | 0.017 | Ω | VGS = 10 V, ID = 8 A | 2 | ||
| Drain-Source On-State Resistance Ch-2 | RDS(on) | 0.009 | Ω | VGS = 10 V, ID = 8 A | 2 | ||
| Drain-Source On-State Resistance Ch-1 | RDS(on) | 0.021 | Ω | VGS = 4.5 V, ID = 5 A | 2 | ||
| Drain-Source On-State Resistance Ch-2 | RDS(on) | 0.01 | Ω | VGS = 4.5 V, ID = 5 A | 2 | ||
| Total Gate Charge Ch-1 | Qg | 29 | 44 | nC | VDS = 15 V, VGS = 10 V, ID = 8 A | 2 | |
| Total Gate Charge Ch-2 | Qg | 39 | 59 | nC | VDS = 15 V, VGS = 10 V, ID = 8 A | 2 | |
| Total Gate Charge Ch-1 | Qg | 12.5 | 19 | nC | VDS = 15 V, VGS = 4.5 V, ID = 8 A | 2 | |
| Total Gate Charge Ch-2 | Qg | 17 | 26 | nC | VDS = 15 V, VGS = 4.5 V, ID = 8 A | 2 | |
| Gate Resistance Ch-1 | Rg | 1.8 | 3 | Ω | f = 1 MHz | 2 | |
| Gate Resistance Ch-2 | Rg | 1.9 | 3 | Ω | f = 1 MHz | 2 | |
| Turn-On Delay Time Ch-1 | td(on) | 8 | 15 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time Ch-2 | td(on) | 9 | 16 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Rise Time Ch-1 | tr | 22 | 33 | ns | VGEN = 10 V | 3 | |
| Rise Time Ch-2 | tr | 24 | 36 | ns | VGEN = 10 V | 3 | |
| Turn-Off Delay Time Ch-1 | td(off) | 20 | 30 | ns | VGEN = 10 V | 3 | |
| Turn-Off Delay Time Ch-2 | td(off) | 26 | 39 | ns | VGEN = 10 V | 3 | |
| Fall Time Ch-1 | tf | 8 | 15 | ns | VGEN = 10 V | 3 | |
| Fall Time Ch-2 | tf | 8 | 15 | ns | VGEN = 10 V | 3 | |
| Turn-On Delay Time Ch-1 | td(on) | 24 | 36 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time Ch-2 | td(on) | 24 | 36 | ns | VGEN = 4.5 V | 3 | |
| Rise Time Ch-1 | tr | 87 | 130 | ns | VGEN = 4.5 V | 3 | |
| Rise Time Ch-2 | tr | 97 | 145 | ns | VGEN = 4.5 V | 3 | |
| Turn-Off Delay Time Ch-1 | td(off) | 30 | 45 | ns | VGEN = 4.5 V | 3 | |
| Turn-Off Delay Time Ch-2 | td(off) | 35 | 53 | ns | VGEN = 4.5 V | 3 | |
| Fall Time Ch-1 | tf | 34 | 51 | ns | VGEN = 4.5 V | 3 | |
| Fall Time Ch-2 | tf | 45 | 68 | ns | VGEN = 4.5 V | 3 | |
| Body Diode Voltage Ch-1 | VSD | 0.77 | 1.1 | V | IS = 2 A | 3 | |
| Body Diode Voltage Ch-2 | VSD | 0.37 | 0.43 | V | IS = 1 A | 3 | |
| Body Diode Reverse Recovery Time Ch-1 | trr | 22 | 33 | ns | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Time Ch-2 | trr | 26 | 39 | ns | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge Ch-1 | Qrr | 15 | 23 | nC | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge Ch-2 | Qrr | 15 | 23 | nC | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Drain-Source Voltage Ch-1/Ch-2 | VDS | 30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -16 | 16 | V | TA = 25 °C | 1 | |
| Continuous Drain Current Ch-1 | ID | 8 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current Ch-2 | ID | 15 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Pulsed Drain Current Ch-1 | IDM | 35 | A | 10 µs pulse width | 1 | ||
| Pulsed Drain Current Ch-2 | IDM | 60 | A | 10 µs pulse width | 1 | ||
| Single Pulse Avalanche Current | IAS | 15 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 11.2 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation Ch-1 | PD | 1.98 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation Ch-2 | PD | 4.16 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance Ch-1 | RthJA | 72 | 90 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 | 1 | |
| Junction-to-Ambient Thermal Resistance Ch-2 | RthJA | 43 | 53 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 | 1 | |
| Junction-to-Foot Thermal Resistance Ch-1 | RthJF | 51 | 63 | °C/W | Steady State | 1 | |
| Junction-to-Foot Thermal Resistance Ch-2 | RthJF | 25 | 30 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
SI4816DY-T1-E3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4816dy-t1-e3-vb-etched.step/si4816dy-t1-e3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4816dy-t1-e3-vb.step/si4816dy-t1-e3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
1194f1dcdc4c66b2, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).