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SI4816DY-T1-E3-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi4816dy-t1-e3-vbfactory-2.0.0extractor-text

Verified SI4816DY-T1-E3-VB

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SI4816DY-T1-E3-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 14-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-fh2vwy2y/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.12)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ si4816dy-t1-e3-vb.kicad_sym✓ si4816dy-t1-e3-vb.kicad_mod✓ si4816dy-t1-e3-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers si4816dy-t1-e3-vb: viewers · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
si4816dy-t1-e3-vb-etched.glb Publish 0.1.0 · Ray 7d ago
si4816dy-t1-e3-vb-etched.step si4816dy-t1-e3-vb: factory component page (tier=lcsc) · Ray 7d ago
si4816dy-t1-e3-vb-hero.glb si4816dy-t1-e3-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
si4816dy-t1-e3-vb-hero.overlay.json Publish 0.1.0 · Ray 7d ago
si4816dy-t1-e3-vb.glb Publish 0.1.0 · Ray 7d ago
si4816dy-t1-e3-vb.kicad_mod Publish 0.1.0 · Ray 7d ago
si4816dy-t1-e3-vb.kicad_sym Publish 0.1.0 · Ray 7d ago
si4816dy-t1-e3-vb.lbr Publish 0.1.0 · Ray 7d ago
si4816dy-t1-e3-vb.step Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 7d ago

SI4816DY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI4816DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of N-Channel 1 MOSFET (Channel-1), VGS rated ±16 V.
2 S2 passive Source of N-Channel 2 MOSFET (Channel-2, with Schottky diode).
3 S2 passive Source of N-Channel 2 MOSFET (Channel-2, with Schottky diode), tied to the other S2 pin.
4 G2 input Gate of N-Channel 2 MOSFET (Channel-2), VGS rated ±16 V.
5 S1/D2 passive Common node: source of Channel-1 and drain of Channel-2 (Schottky diode connected here), VDS 30 V max.
6 S1/D2 passive Common node: source of Channel-1 and drain of Channel-2 (Schottky diode connected here), VDS 30 V max.
7 S1/D2 passive Common node: source of Channel-1 and drain of Channel-2 (Schottky diode connected here), VDS 30 V max.
8 D1 passive Drain of N-Channel 1 MOSFET (Channel-1), VDS 30 V max.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage Ch-1 VDS 30 V VGS = 0 V, ID = 1 mA 2
Drain-Source Breakdown Voltage Ch-2 VDS 30 V VGS = 0 V, ID = 1 mA 2
Gate Threshold Voltage Ch-1 VGS(th) 1 2.5 V VDS = VGS, ID = 1 mA 2
Gate Threshold Voltage Ch-2 VGS(th) 1 2.5 V VDS = VGS, ID = 1 mA 2
Gate-Body Leakage Ch-1 IGSS 100 µA VDS = 0 V, VGS = ± 16 V 2
Gate-Body Leakage Ch-2 IGSS 100 µA VDS = 0 V, VGS = ± 16 V 2
Zero Gate Voltage Drain Current Ch-1 IDSS 0.001 mA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current Ch-2 IDSS 0.05 0.5 mA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current Ch-1 hot IDSS 0.025 mA VDS = 30 V, VGS = 0 V, TJ = 100 °C 2
Zero Gate Voltage Drain Current Ch-2 hot IDSS 3 15 mA VDS = 30 V, VGS = 0 V, TJ = 100 °C 2
On-State Drain Current Ch-1 ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current Ch-2 ID(on) 20 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance Ch-1 RDS(on) 0.017 Ω VGS = 10 V, ID = 8 A 2
Drain-Source On-State Resistance Ch-2 RDS(on) 0.009 Ω VGS = 10 V, ID = 8 A 2
Drain-Source On-State Resistance Ch-1 RDS(on) 0.021 Ω VGS = 4.5 V, ID = 5 A 2
Drain-Source On-State Resistance Ch-2 RDS(on) 0.01 Ω VGS = 4.5 V, ID = 5 A 2
Total Gate Charge Ch-1 Qg 29 44 nC VDS = 15 V, VGS = 10 V, ID = 8 A 2
Total Gate Charge Ch-2 Qg 39 59 nC VDS = 15 V, VGS = 10 V, ID = 8 A 2
Total Gate Charge Ch-1 Qg 12.5 19 nC VDS = 15 V, VGS = 4.5 V, ID = 8 A 2
Total Gate Charge Ch-2 Qg 17 26 nC VDS = 15 V, VGS = 4.5 V, ID = 8 A 2
Gate Resistance Ch-1 Rg 1.8 3 Ω f = 1 MHz 2
Gate Resistance Ch-2 Rg 1.9 3 Ω f = 1 MHz 2
Turn-On Delay Time Ch-1 td(on) 8 15 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time Ch-2 td(on) 9 16 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 3
Rise Time Ch-1 tr 22 33 ns VGEN = 10 V 3
Rise Time Ch-2 tr 24 36 ns VGEN = 10 V 3
Turn-Off Delay Time Ch-1 td(off) 20 30 ns VGEN = 10 V 3
Turn-Off Delay Time Ch-2 td(off) 26 39 ns VGEN = 10 V 3
Fall Time Ch-1 tf 8 15 ns VGEN = 10 V 3
Fall Time Ch-2 tf 8 15 ns VGEN = 10 V 3
Turn-On Delay Time Ch-1 td(on) 24 36 ns VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 3
Turn-On Delay Time Ch-2 td(on) 24 36 ns VGEN = 4.5 V 3
Rise Time Ch-1 tr 87 130 ns VGEN = 4.5 V 3
Rise Time Ch-2 tr 97 145 ns VGEN = 4.5 V 3
Turn-Off Delay Time Ch-1 td(off) 30 45 ns VGEN = 4.5 V 3
Turn-Off Delay Time Ch-2 td(off) 35 53 ns VGEN = 4.5 V 3
Fall Time Ch-1 tf 34 51 ns VGEN = 4.5 V 3
Fall Time Ch-2 tf 45 68 ns VGEN = 4.5 V 3
Body Diode Voltage Ch-1 VSD 0.77 1.1 V IS = 2 A 3
Body Diode Voltage Ch-2 VSD 0.37 0.43 V IS = 1 A 3
Body Diode Reverse Recovery Time Ch-1 trr 22 33 ns IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Time Ch-2 trr 26 39 ns IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge Ch-1 Qrr 15 23 nC IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge Ch-2 Qrr 15 23 nC IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Drain-Source Voltage Ch-1/Ch-2 VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -16 16 V TA = 25 °C 1
Continuous Drain Current Ch-1 ID 8 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current Ch-2 ID 15 A TC = 25 °C, TJ = 150 °C 1
Pulsed Drain Current Ch-1 IDM 35 A 10 µs pulse width 1
Pulsed Drain Current Ch-2 IDM 60 A 10 µs pulse width 1
Single Pulse Avalanche Current IAS 15 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 11.2 mJ L = 0.1 mH 1
Maximum Power Dissipation Ch-1 PD 1.98 W TC = 25 °C 1
Maximum Power Dissipation Ch-2 PD 4.16 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance Ch-1 RthJA 72 90 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 1
Junction-to-Ambient Thermal Resistance Ch-2 RthJA 43 53 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 1
Junction-to-Foot Thermal Resistance Ch-1 RthJF 51 63 °C/W Steady State 1
Junction-to-Foot Thermal Resistance Ch-2 RthJF 25 30 °C/W Steady State 1

CAD (KiCad official)

  • Symbol: SI4816DY-T1-E3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4816dy-t1-e3-vb-etched.step / si4816dy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4816dy-t1-e3-vb.step / si4816dy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 1194f1dcdc4c66b2, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF