component
HSW6113
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSW6113
HUASHUO · MOSFETs · SOT-23-6L
HSW6113 from HUASHUO, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, connected internally with the other drain pins; rated for VDS of -60 V and continuous ID of -4.5 A at TA=25℃. |
| 2 | D | passive | Drain, connected internally with the other drain pins; rated for VDS of -60 V and pulsed IDM of -15 A. |
| 3 | G | input | Gate; maximum gate-source voltage ±20 V, threshold VGS(th) -1.2 V min to -2.5 V max at ID=-250uA. |
| 4 | S | passive | Source of the P-channel MOSFET; RDS(ON) max 90 mΩ at VGS=-10V, ID=-3A. |
| 5 | D | passive | Drain, connected internally with the other drain pins; drain-source leakage max 1 uA at VDS=-48V, TJ=25℃. |
| 6 | D | passive | Drain, connected internally with the other drain pins; drain-source breakdown voltage -60 V min at ID=-250uA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23-6L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -4.5 | A | TA=25℃, VGS @ -10V | 1 | ||
| Continuous Drain Current | ID | -3 | A | TA=70℃, VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -15 | A | 1 | |||
| Total Power Dissipation | PD | 1.8 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 80 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 39 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 90 | mΩ | VGS=-10V, ID=-3A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 115 | mΩ | VGS=-4.5V, ID=-2A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -3 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSW6113 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
hsw6113-etched.step/hsw6113-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsw6113.step/hsw6113.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
2a6a8a2ad44ac74a, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).