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Contents

README

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HSW6113

HUASHUO · MOSFETs · SOT-23-6L

HSW6113 from HUASHUO, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, connected internally with the other drain pins; rated for VDS of -60 V and continuous ID of -4.5 A at TA=25℃.
2 D passive Drain, connected internally with the other drain pins; rated for VDS of -60 V and pulsed IDM of -15 A.
3 G input Gate; maximum gate-source voltage ±20 V, threshold VGS(th) -1.2 V min to -2.5 V max at ID=-250uA.
4 S passive Source of the P-channel MOSFET; RDS(ON) max 90 mΩ at VGS=-10V, ID=-3A.
5 D passive Drain, connected internally with the other drain pins; drain-source leakage max 1 uA at VDS=-48V, TJ=25℃.
6 D passive Drain, connected internally with the other drain pins; drain-source breakdown voltage -60 V min at ID=-250uA.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-23-6L
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -4.5 A TA=25℃, VGS @ -10V 1
Continuous Drain Current ID -3 A TA=70℃, VGS @ -10V 1
Pulsed Drain Current IDM -15 A 1
Total Power Dissipation PD 1.8 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 80 ℃/W 1
Thermal Resistance Junction-Case RθJC 39 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 90 mΩ VGS=-10V, ID=-3A 2
Static Drain-Source On-Resistance RDS(ON) 115 mΩ VGS=-4.5V, ID=-2A 2
Gate Threshold Voltage VGS(th) -1.2 -1.6 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -3 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSW6113
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: hsw6113-etched.step / hsw6113-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsw6113.step / hsw6113.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 2a6a8a2ad44ac74a, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF