component
IRF7389TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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README
markdownIRF7389TR
UMW · MOSFETs · SOP-8
IRF7389TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the S1/G1/D1 device in the complementary half-bridge, with the datasheet's maximum VDS of 30V (N-Ch) and -30V (P-Ch) applying across drain and source. |
| 2 | G1 | input | Gate of the G1 device, rated for VGS of ±20V on both the N-Channel and P-Channel parts. |
| 3 | S2 | passive | Source terminal of the S2/G2/D2 device in the complementary half-bridge, with the datasheet's maximum VDS of 30V (N-Ch) and -30V (P-Ch) applying across drain and source. |
| 4 | G2 | input | Gate of the G2 device, rated for VGS of ±20V on both the N-Channel and P-Channel parts. |
| 5 | D2 | passive | Drain terminal of one of the two half-bridge devices (D1 or D2), with VDS limits of 30V (N-Ch) and -30V (P-Ch). |
| 6 | D2 | passive | Drain terminal of one of the two half-bridge devices (D1 or D2), with VDS limits of 30V (N-Ch) and -30V (P-Ch). |
| 7 | D1 | passive | Drain terminal of one of the two half-bridge devices (D1 or D2), with VDS limits of 30V (N-Ch) and -30V (P-Ch). |
| 8 | D1 | passive | Drain terminal of one of the two half-bridge devices (D1 or D2), with VDS limits of 30V (N-Ch) and -30V (P-Ch). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | 2 | |||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | 2 | |||
| Gate-Source Voltage (N and P) | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 7.3 | A | TA=25°C | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -5.3 | A | TA=25°C | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 5.9 | A | TA=70°C | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -4.2 | A | TA=70°C | 2 | ||
| Pulsed Drain Current (N-Channel) | IDM | 30 | A | 2 | |||
| Pulsed Drain Current (P-Channel) | IDM | -30 | A | 2 | |||
| Single Pulse Avalanche Energy (N-Channel) | EAS | 82 | mJ | 2 | |||
| Single Pulse Avalanche Energy (P-Channel) | EAS | 140 | mJ | 2 | |||
| Avalanche Current (N-Channel) | IAR | 4 | A | 2 | |||
| Avalanche Current (P-Channel) | IAR | -2.8 | A | 2 | |||
| Repetitive Avalanche Energy (N-Channel) | EAR | 0.2 | mJ | 2 | |||
| Repetitive Avalanche Energy (P-Channel) | EAR | 0.2 | mJ | 2 | |||
| Peak Diode Recovery dv/dt (N-Channel) | dv/dt | 3.8 | V/ns | ISD≤4A, di/dt≤74A/μs, VDD≤V(BR)DSS, TJ≤150°C (note ②) | 2 | ||
| Peak Diode Recovery dv/dt (P-Channel) | dv/dt | -2.2 | V/ns | ISD≤-2.8A, di/dt≤150Aμs, VDD≤V(BR)DSS, TJ≤150°C (note ②) | 2 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA=25°C (note ⑤) | 2 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA=70°C (note ⑤) | 2 | ||
| Maximum Junction-to-Ambient | RθJA | 62.5 | °C/W | Surface mounted on FR-4 board, t≤10sec (note ⑤) | 2 | ||
| Drain-to-Source Breakdown Voltage (N-Channel) | V(BR)DSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Drain-to-Source Breakdown Voltage (P-Channel) | V(BR)DSS | -30 | V | ID=-250µA, VGS=0V | 3 | ||
| Static Drain-to-Source On-Resistance (N-Channel) | RDS(ON) | 23 | 29 | mΩ | VGS=10V, ID=5.8A (note ④) | 3 | |
| Static Drain-to-Source On-Resistance (N-Channel) | RDS(ON) | 32 | 46 | mΩ | VGS=4.5V, ID=4.7A (note ④) | 3 | |
| Static Drain-to-Source On-Resistance (P-Channel) | RDS(ON) | 42 | 58 | mΩ | VGS=-10V, ID=-4.9A (note ④) | 3 | |
| Static Drain-to-Source On-Resistance (P-Channel) | RDS(ON) | 76 | 98 | mΩ | VGS=-4.5V, ID=-3.6A (note ④) | 3 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | V | VDS=VGS, ID=250μA | 3 | ||
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | V | VDS=VGS, ID=-250μA | 3 | ||
| Drain-to-Source Leakage Current (N-Channel) | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current (P-Channel) | IDSS | -1 | µA | VDS=-24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current (N-Channel) | IDSS | 25 | µA | VDS=24V, VGS=0V, TJ=55°C | 3 | ||
| Drain-to-Source Leakage Current (P-Channel) | IDSS | -25 | µA | VDS=-24V, VGS=0V, TJ=55°C | 3 | ||
| Gate-to-Source Forward Leakage Current (N and P) | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Total Gate Charge (N-Channel) | Qg | 22 | 33 | nC | ID=5.8A, VDS=15V, VGS=10V | 3 | |
| Total Gate Charge (P-Channel) | Qg | 23 | 34 | nC | ID=-4.9A, VDS=-15V, VGS=-10V | 3 | |
| Gate-to-Source Charge (N-Channel) | Qgs | 2.6 | 3.9 | nC | ID=5.8A, VDS=15V, VGS=10V | 3 | |
| Gate-to-Source Charge (P-Channel) | Qgs | 3.8 | 5.7 | nC | ID=-4.9A, VDS=-15V, VGS=-10V | 3 | |
| Gate-to-Drain (Miller) Charge (N-Channel) | Qgd | 6.4 | 9.6 | nC | ID=5.8A, VDS=15V, VGS=10V | 3 | |
| Gate-to-Drain (Miller) Charge (P-Channel) | Qgd | 5.9 | 8.9 | nC | ID=-4.9A, VDS=-15V, VGS=-10V | 3 | |
| Turn-On Delay Time (N-Channel) | tD(on) | 8.1 | 12 | ns | VDD=15A, ID=1A, RG=6Ω, RD=15Ω (note ④) | 3 | |
| Turn-On Delay Time (P-Channel) | tD(on) | 13 | 19 | ns | VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω (note ④) | 3 | |
| Rise Time (N-Channel) | tr | 8.9 | 13 | ns | VDD=15A, ID=1A, RG=6Ω, RD=15Ω (note ④) | 3 | |
| Rise Time (P-Channel) | tr | 13 | 20 | ns | VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω (note ④) | 3 | |
| Turn-Off Delay Time (N-Channel) | tD(off) | 26 | 39 | ns | VDD=15A, ID=1A, RG=6Ω, RD=15Ω (note ④) | 4 | |
| Turn-Off Delay Time (P-Channel) | tD(off) | 34 | 51 | ns | VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω (note ④) | 4 | |
| Fall Time (N-Channel) | tf | 17 | 26 | ns | VDD=15A, ID=1A, RG=6Ω, RD=15Ω (note ④) | 4 | |
| Fall Time (P-Channel) | tf | 32 | 48 | ns | VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω (note ④) | 4 | |
| Continuous Source Current (Body Diode) (N-Channel) | IS | 2.5 | A | 4 | |||
| Continuous Source Current (Body Diode) (P-Channel) | IS | -2.5 | A | 4 | |||
| Pulsed Source Current (Body Diode) (N-Channel) | ISM | 30 | A | note ①: repetitive rating, pulse width limited by max. junction temperature | 4 | ||
| Pulsed Source Current (Body Diode) (P-Channel) | ISM | -30 | A | note ①: repetitive rating, pulse width limited by max. junction temperature | 4 | ||
| Diode Forward Voltage (N-Channel) | VSD | 0.78 | 1 | V | TJ=25°C, IS=1.7A, VGS=0V (note ③) | 4 | |
| Diode Forward Voltage (P-Channel) | VSD | -0.78 | -1 | V | TJ=25°C, IS=-1.7A, VGS=0V (note ③) | 4 | |
| Reverse Recovery Time (N-Channel) | trr | 45 | 68 | ns | TJ=25°C, IF=1.7A, di/dt=100A/µs | 4 | |
| Reverse Recovery Time (P-Channel) | trr | 44 | 66 | ns | TJ=25°C, IF=-1.7A, di/dt=100A/µs (note ④) | 4 | |
| Reverse Recovery Charge (N-Channel) | Qrr | 58 | 87 | nC | TJ=25°C, IF=1.7A, di/dt=100A/µs | 4 | |
| Reverse Recovery Charge (P-Channel) | Qrr | 42 | 63 | nC | TJ=25°C, IF=-1.7A, di/dt=100A/µs (note ④) | 4 | |
| Input Capacitance (N-Channel) | Ciss | 650 | pF | VGS=0V, VDS=25V, f=1MHz | 4 | ||
| Input Capacitance (P-Channel) | Ciss | 710 | pF | VGS=0V, VDS=-25V, f=1MHz | 4 |
CAD (KiCad official)
- Symbol:
IRF7389TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7389tr-etched.step/irf7389tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7389tr.step/irf7389tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
7fea7b512f1c3e00, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).