component

IRF7389TR

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorirf7389trfactory-2.0.0extractor-text

Verified IRF7389TR

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IRF7389TR · SOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 11-page datasheet
  • •distributor (warn): no ['mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-73hln7k3/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.9)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ irf7389tr.kicad_sym✓ irf7389tr.kicad_mod✓ irf7389tr.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 1d ago
viewers irf7389tr: viewers · Ray 1d ago
irf7389tr-etched.glb Publish 0.1.0 · Ray 1d ago
irf7389tr-etched.step irf7389tr: factory component page (tier=lcsc) · Ray 1d ago
irf7389tr-hero.glb irf7389tr: hero GLB from the etched model (keeps the MPN mark) · Ray 1d ago
irf7389tr-hero.overlay.json Publish 0.1.0 · Ray 1d ago
irf7389tr.glb Publish 0.1.0 · Ray 1d ago
irf7389tr.kicad_mod Publish 0.1.0 · Ray 1d ago
irf7389tr.kicad_sym Publish 0.1.0 · Ray 1d ago
irf7389tr.lbr Publish 0.1.0 · Ray 1d ago
irf7389tr.step Publish 0.1.0 · Ray 1d ago
package.json Publish 0.1.0 · Ray 1d ago
page.json Set visibility: public · Ray 1d ago
README.md Publish 0.1.0 · Ray 1d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 1d ago

IRF7389TR

UMW · MOSFETs · SOP-8

IRF7389TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the S1/G1/D1 device in the complementary half-bridge, with the datasheet's maximum VDS of 30V (N-Ch) and -30V (P-Ch) applying across drain and source.
2 G1 input Gate of the G1 device, rated for VGS of ±20V on both the N-Channel and P-Channel parts.
3 S2 passive Source terminal of the S2/G2/D2 device in the complementary half-bridge, with the datasheet's maximum VDS of 30V (N-Ch) and -30V (P-Ch) applying across drain and source.
4 G2 input Gate of the G2 device, rated for VGS of ±20V on both the N-Channel and P-Channel parts.
5 D2 passive Drain terminal of one of the two half-bridge devices (D1 or D2), with VDS limits of 30V (N-Ch) and -30V (P-Ch).
6 D2 passive Drain terminal of one of the two half-bridge devices (D1 or D2), with VDS limits of 30V (N-Ch) and -30V (P-Ch).
7 D1 passive Drain terminal of one of the two half-bridge devices (D1 or D2), with VDS limits of 30V (N-Ch) and -30V (P-Ch).
8 D1 passive Drain terminal of one of the two half-bridge devices (D1 or D2), with VDS limits of 30V (N-Ch) and -30V (P-Ch).

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 30 V 2
Drain-Source Voltage (P-Channel) VDS -30 V 2
Gate-Source Voltage (N and P) VGS -20 20 V 2
Continuous Drain Current (N-Channel) ID 7.3 A TA=25°C 2
Continuous Drain Current (P-Channel) ID -5.3 A TA=25°C 2
Continuous Drain Current (N-Channel) ID 5.9 A TA=70°C 2
Continuous Drain Current (P-Channel) ID -4.2 A TA=70°C 2
Pulsed Drain Current (N-Channel) IDM 30 A 2
Pulsed Drain Current (P-Channel) IDM -30 A 2
Single Pulse Avalanche Energy (N-Channel) EAS 82 mJ 2
Single Pulse Avalanche Energy (P-Channel) EAS 140 mJ 2
Avalanche Current (N-Channel) IAR 4 A 2
Avalanche Current (P-Channel) IAR -2.8 A 2
Repetitive Avalanche Energy (N-Channel) EAR 0.2 mJ 2
Repetitive Avalanche Energy (P-Channel) EAR 0.2 mJ 2
Peak Diode Recovery dv/dt (N-Channel) dv/dt 3.8 V/ns ISD≤4A, di/dt≤74A/μs, VDD≤V(BR)DSS, TJ≤150°C (note ②) 2
Peak Diode Recovery dv/dt (P-Channel) dv/dt -2.2 V/ns ISD≤-2.8A, di/dt≤150Aμs, VDD≤V(BR)DSS, TJ≤150°C (note ②) 2
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum Power Dissipation PD 2.5 W TA=25°C (note ⑤) 2
Maximum Power Dissipation PD 1.6 W TA=70°C (note ⑤) 2
Maximum Junction-to-Ambient RθJA 62.5 °C/W Surface mounted on FR-4 board, t≤10sec (note ⑤) 2
Drain-to-Source Breakdown Voltage (N-Channel) V(BR)DSS 30 V ID=250µA, VGS=0V 3
Drain-to-Source Breakdown Voltage (P-Channel) V(BR)DSS -30 V ID=-250µA, VGS=0V 3
Static Drain-to-Source On-Resistance (N-Channel) RDS(ON) 23 29 mΩ VGS=10V, ID=5.8A (note ④) 3
Static Drain-to-Source On-Resistance (N-Channel) RDS(ON) 32 46 mΩ VGS=4.5V, ID=4.7A (note ④) 3
Static Drain-to-Source On-Resistance (P-Channel) RDS(ON) 42 58 mΩ VGS=-10V, ID=-4.9A (note ④) 3
Static Drain-to-Source On-Resistance (P-Channel) RDS(ON) 76 98 mΩ VGS=-4.5V, ID=-3.6A (note ④) 3
Gate Threshold Voltage (N-Channel) VGS(th) 1 V VDS=VGS, ID=250μA 3
Gate Threshold Voltage (P-Channel) VGS(th) -1 V VDS=VGS, ID=-250μA 3
Drain-to-Source Leakage Current (N-Channel) IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current (P-Channel) IDSS -1 µA VDS=-24V, VGS=0V 3
Drain-to-Source Leakage Current (N-Channel) IDSS 25 µA VDS=24V, VGS=0V, TJ=55°C 3
Drain-to-Source Leakage Current (P-Channel) IDSS -25 µA VDS=-24V, VGS=0V, TJ=55°C 3
Gate-to-Source Forward Leakage Current (N and P) IGSS -100 100 nA VGS=±20V 3
Total Gate Charge (N-Channel) Qg 22 33 nC ID=5.8A, VDS=15V, VGS=10V 3
Total Gate Charge (P-Channel) Qg 23 34 nC ID=-4.9A, VDS=-15V, VGS=-10V 3
Gate-to-Source Charge (N-Channel) Qgs 2.6 3.9 nC ID=5.8A, VDS=15V, VGS=10V 3
Gate-to-Source Charge (P-Channel) Qgs 3.8 5.7 nC ID=-4.9A, VDS=-15V, VGS=-10V 3
Gate-to-Drain (Miller) Charge (N-Channel) Qgd 6.4 9.6 nC ID=5.8A, VDS=15V, VGS=10V 3
Gate-to-Drain (Miller) Charge (P-Channel) Qgd 5.9 8.9 nC ID=-4.9A, VDS=-15V, VGS=-10V 3
Turn-On Delay Time (N-Channel) tD(on) 8.1 12 ns VDD=15A, ID=1A, RG=6Ω, RD=15Ω (note ④) 3
Turn-On Delay Time (P-Channel) tD(on) 13 19 ns VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω (note ④) 3
Rise Time (N-Channel) tr 8.9 13 ns VDD=15A, ID=1A, RG=6Ω, RD=15Ω (note ④) 3
Rise Time (P-Channel) tr 13 20 ns VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω (note ④) 3
Turn-Off Delay Time (N-Channel) tD(off) 26 39 ns VDD=15A, ID=1A, RG=6Ω, RD=15Ω (note ④) 4
Turn-Off Delay Time (P-Channel) tD(off) 34 51 ns VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω (note ④) 4
Fall Time (N-Channel) tf 17 26 ns VDD=15A, ID=1A, RG=6Ω, RD=15Ω (note ④) 4
Fall Time (P-Channel) tf 32 48 ns VDD=-15A, ID=-1A, RG=6Ω, RD=15Ω (note ④) 4
Continuous Source Current (Body Diode) (N-Channel) IS 2.5 A 4
Continuous Source Current (Body Diode) (P-Channel) IS -2.5 A 4
Pulsed Source Current (Body Diode) (N-Channel) ISM 30 A note ①: repetitive rating, pulse width limited by max. junction temperature 4
Pulsed Source Current (Body Diode) (P-Channel) ISM -30 A note ①: repetitive rating, pulse width limited by max. junction temperature 4
Diode Forward Voltage (N-Channel) VSD 0.78 1 V TJ=25°C, IS=1.7A, VGS=0V (note ③) 4
Diode Forward Voltage (P-Channel) VSD -0.78 -1 V TJ=25°C, IS=-1.7A, VGS=0V (note ③) 4
Reverse Recovery Time (N-Channel) trr 45 68 ns TJ=25°C, IF=1.7A, di/dt=100A/µs 4
Reverse Recovery Time (P-Channel) trr 44 66 ns TJ=25°C, IF=-1.7A, di/dt=100A/µs (note ④) 4
Reverse Recovery Charge (N-Channel) Qrr 58 87 nC TJ=25°C, IF=1.7A, di/dt=100A/µs 4
Reverse Recovery Charge (P-Channel) Qrr 42 63 nC TJ=25°C, IF=-1.7A, di/dt=100A/µs (note ④) 4
Input Capacitance (N-Channel) Ciss 650 pF VGS=0V, VDS=25V, f=1MHz 4
Input Capacitance (P-Channel) Ciss 710 pF VGS=0V, VDS=-25V, f=1MHz 4

CAD (KiCad official)

  • Symbol: IRF7389TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7389tr-etched.step / irf7389tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7389tr.step / irf7389tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 7fea7b512f1c3e00, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF