component
MMBTH81
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownMMBTH81
onsemi · Bipolar (BJT) · SOT-23
MMBTH81 from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP RF transistor; the datasheet's emitter-base reverse limit is VEBO 3.0 V and the IEBO test uses VEB = 2.0 V. |
| 2 | E | passive | Emitter terminal of the PNP RF transistor; the datasheet rates the emitter-base breakdown at V(BR)EBO 3.0 V minimum with IE = 10 µA. |
| 3 | C | passive | Collector terminal of the PNP RF transistor; the datasheet limits are VCEO 20 V, VCBO 20 V and continuous IC 50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 20 | V | 2 | |||
| Collector-Base Voltage | VCBO | 20 | V | 2 | |||
| Emitter-Base Voltage | VEBO | 3 | V | 2 | |||
| Collector Current - Continuous | IC | 50 | mA | 2 | |||
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Total Device Dissipation | PD | 225 | mW | TA = 25°C; device mounted on FR-4 PCB 1.6" X 1.6" X 0.06" | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 556 | °C/W | Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06" | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 125 | °C/W | 2 | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 20 | V | IC = 1.0 mA, IB = 0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 20 | V | IC = 10 µA, IE = 0 | 3 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 3 | V | IE = 10 µA, IC = 0 | 3 | ||
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 10 V, IE = 0 | 3 | ||
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 2.0 V, IC = 0 | 3 | ||
| DC Current Gain | hFE | 60 | IC = 5.0 mA, VCE = 10 V | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC = 5.0 mA, IB = 0.5 mA | 3 | ||
| Base-Emitter On Voltage | VBE(on) | 0.9 | V | IC = 5.0 mA, VCE = 10 V | 3 | ||
| Current Gain - Bandwidth Product | fT | 600 | MHz | IC = 5.0 mA, VCE = 10 V, f = 100 MHz | 3 | ||
| Collector-Base Capacitance | Ccb | 0.85 | pF | VCB = 10 V, IE = 0, f = 1.0 MHz | 3 | ||
| Collector Emitter Capacitance | Cce | 0.65 | pF | VCB = 10 V, IB = 0, f = 1.0 MHz | 3 |
CAD (KiCad official)
- Symbol:
MMBTH81 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbth81-etched.step/mmbth81-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbth81.step/mmbth81.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (13 pp, sha256
6401dce6c10b9144, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).