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MMBTH81

onsemi · Bipolar (BJT) · SOT-23

MMBTH81 from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP RF transistor; the datasheet's emitter-base reverse limit is VEBO 3.0 V and the IEBO test uses VEB = 2.0 V.
2 E passive Emitter terminal of the PNP RF transistor; the datasheet rates the emitter-base breakdown at V(BR)EBO 3.0 V minimum with IE = 10 µA.
3 C passive Collector terminal of the PNP RF transistor; the datasheet limits are VCEO 20 V, VCBO 20 V and continuous IC 50 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 20 V 2
Collector-Base Voltage VCBO 20 V 2
Emitter-Base Voltage VEBO 3 V 2
Collector Current - Continuous IC 50 mA 2
Operating and Storage Junction Temperature Range TJ, Tstg -55 150 °C 2
Total Device Dissipation PD 225 mW TA = 25°C; device mounted on FR-4 PCB 1.6" X 1.6" X 0.06" 2
Thermal Resistance, Junction to Ambient RθJA 556 °C/W Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06" 2
Thermal Resistance, Junction to Case RθJC 125 °C/W 2
Collector-Emitter Breakdown Voltage V(BR)CEO 20 V IC = 1.0 mA, IB = 0 3
Collector-Base Breakdown Voltage V(BR)CBO 20 V IC = 10 µA, IE = 0 3
Emitter-Base Breakdown Voltage V(BR)EBO 3 V IE = 10 µA, IC = 0 3
Collector Cutoff Current ICBO 100 nA VCB = 10 V, IE = 0 3
Emitter Cutoff Current IEBO 100 nA VEB = 2.0 V, IC = 0 3
DC Current Gain hFE 60 IC = 5.0 mA, VCE = 10 V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC = 5.0 mA, IB = 0.5 mA 3
Base-Emitter On Voltage VBE(on) 0.9 V IC = 5.0 mA, VCE = 10 V 3
Current Gain - Bandwidth Product fT 600 MHz IC = 5.0 mA, VCE = 10 V, f = 100 MHz 3
Collector-Base Capacitance Ccb 0.85 pF VCB = 10 V, IE = 0, f = 1.0 MHz 3
Collector Emitter Capacitance Cce 0.65 pF VCB = 10 V, IB = 0, f = 1.0 MHz 3

CAD (KiCad official)

  • Symbol: MMBTH81
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbth81-etched.step / mmbth81-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbth81.step / mmbth81.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 6401dce6c10b9144, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF