component
HTRS16N65FBS1Q
Public Made by Adomby adom
HXY MOSFET SiC Diodes, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHTRS16N65FBS1Q
HXY MOSFET · SiC Diodes · TO-247
HTRS16N65FBS1Q from HXY MOSFET, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (PIN 1); its cathode is common with the case and pin 2. |
| 2 | K | passive | Common cathode of both diodes, connected internally to the CASE (tab). |
| 3 | A2 | passive | Anode of the second Schottky diode (PIN 3); its cathode is common with the case and pin 2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | 2 | |||
| DC Peak Reverse Voltage | VR | 650 | V | 2 | |||
| Surge Peak Reverse Voltage | VRSM | 650 | V | 2 | |||
| Operating junction range | Tj | -55 | 175 | °C | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Forward Voltage | VF | 1.5 | 1.8 | V | IF=16A, Tj=25°C | 3 | |
| Total Capacitance | C | 394 | pF | Tj=25°C, f=1MHz, VR=0V | 3 | ||
| Total Capacitance | C | 41 | pF | Tj=25°C, f=1MHz, VR=200V | 3 | ||
| Total Capacitance | C | 34 | pF | Tj=25°C, f=1MHz, VR=400V | 3 |
CAD (KiCad official)
- Symbol:
HTRS16N65FBS1Q - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
htrs16n65fbs1q-etched.step/htrs16n65fbs1q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);htrs16n65fbs1q.step/htrs16n65fbs1q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
ca9cbc58687be7a7, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).