component

HTRS16N65FBS1Q

Public Made by Adom

by adom

HXY MOSFET SiC Diodes, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 3h ago
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htrs16n65fbs1q-etched.glb Publish 0.1.0 · Ray 3h ago
htrs16n65fbs1q-etched.step htrs16n65fbs1q: factory component page (tier=lcsc) · Ray 3h ago
htrs16n65fbs1q-hero.glb htrs16n65fbs1q: hero GLB from the etched model (keeps the MPN mark) · Ray 3h ago
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HTRS16N65FBS1Q

HXY MOSFET · SiC Diodes · TO-247

HTRS16N65FBS1Q from HXY MOSFET, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first Schottky diode (PIN 1); its cathode is common with the case and pin 2.
2 K passive Common cathode of both diodes, connected internally to the CASE (tab).
3 A2 passive Anode of the second Schottky diode (PIN 3); its cathode is common with the case and pin 2.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 650 V 2
DC Peak Reverse Voltage VR 650 V 2
Surge Peak Reverse Voltage VRSM 650 V 2
Operating junction range Tj -55 175 °C 2
Storage temperature range Tstg -55 150 °C 2
Forward Voltage VF 1.5 1.8 V IF=16A, Tj=25°C 3
Total Capacitance C 394 pF Tj=25°C, f=1MHz, VR=0V 3
Total Capacitance C 41 pF Tj=25°C, f=1MHz, VR=200V 3
Total Capacitance C 34 pF Tj=25°C, f=1MHz, VR=400V 3

CAD (KiCad official)

  • Symbol: HTRS16N65FBS1Q
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: htrs16n65fbs1q-etched.step / htrs16n65fbs1q-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); htrs16n65fbs1q.step / htrs16n65fbs1q.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 ca9cbc58687be7a7, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF