component
RGS80TSX2DHRC11
Public Made by Adomby adom
ROHM Semicon IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRGS80TSX2DHRC11
ROHM Semicon · IGBT Transistors / Modules · TO-247-3
RGS80TSX2DHRC11 from ROHM Semicon, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | IGBT gate terminal; the gate-emitter voltage is rated ±30 V (VGES). |
| 2 | Collector | passive | IGBT collector terminal; the collector-emitter voltage is rated 1200 V (VCES) and the package includes a built-in FRD. |
| 3 | Emitter | passive | IGBT emitter terminal, the reference for the collector-emitter (VCES 1200 V) and gate-emitter (VGES ±30 V) ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector - Emitter Breakdown Voltage | BVCES | 1200 | V | IC = 10μA, VGE = 0V | 2 | ||
| Gate - Emitter Threshold Voltage | VGE(th) | 5 | 6 | 7 | V | VCE = 5V, IC = 6.1mA | 2 |
| Gate - Emitter Leakage Current | IGES | -500 | 500 | nA | VGE = ±30V, VCE = 0V | 2 | |
| Collector Cut - off Current (Tj = 25°C) | ICES | 10 | μA | VCE = 1200V, VGE = 0V, Tj = 25℃ | 2 | ||
| Collector Cut - off Current (Tj = 175°C) | ICES | 5 | mA | VCE = 1200V, VGE = 0V, Tj = 175℃ | 2 | ||
| Collector - Emitter Saturation Voltage (Tj = 25°C) | VCE(sat) | 1.7 | 2.1 | V | IC = 40A, VGE = 15V, Tj = 25°C | 2 | |
| Short Circuit Withstand Time (Tj = 25°C) | tsc | 10 | μs | VCC ≤ 600V, VGE = 15V, Tj = 25°C | 3 | ||
| Short Circuit Withstand Time (Tj = 150°C) | tsc | 8 | μs | VCC ≤ 600V, VGE = 15V, Tj = 150°C | 3 | ||
| Diode Forward Voltage (Tj = 25°C) | VF | 1.65 | 2.1 | V | IF = 40A, Tj = 25°C | 4 | |
| Collector - Emitter Voltage | VCES | 1200 | V | 1 | |||
| Gate - Emitter Voltage | VGES | -30 | 30 | V | 1 | ||
| Collector Current (TC = 25°C) | IC | 80 | A | TC = 25°C | 1 | ||
| Collector Current (TC = 100°C) | IC | 40 | A | TC = 100°C | 1 | ||
| Pulsed Collector Current | ICP | 120 | A | Pulse width limited by Tjmax | 1 | ||
| Diode Forward Current (TC = 25°C) | IF | 80 | A | TC = 25°C | 1 | ||
| Diode Forward Current (TC = 100°C) | IF | 40 | A | TC = 100°C | 1 | ||
| Diode Pulsed Forward Current | IFP | 120 | A | Pulse width limited by Tjmax | 1 | ||
| Power Dissipation (TC = 25°C) | PD | 555 | W | TC = 25°C | 1 | ||
| Power Dissipation (TC = 100°C) | PD | 277 | W | TC = 100°C | 1 | ||
| Operating Junction Temperature | Tj | -40 | 175 | °C | 1 | ||
| Storage Temperature | Tstg | -55 | 175 | °C | 1 | ||
| Thermal Resistance IGBT Junction - Case | Rθ(j-c) | 0.27 | °C/W | 2 | |||
| Thermal Resistance Diode Junction - Case | Rθ(j-c) | 0.56 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
RGS80TSX2DHRC11 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
rgs80tsx2dhrc11-etched.step/rgs80tsx2dhrc11-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rgs80tsx2dhrc11.step/rgs80tsx2dhrc11.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (12 pp, sha256
f136907c8678cf3d, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).