component

RGS80TSX2DHRC11

Public Made by Adom

by adom

ROHM Semicon IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsrgs80tsx2dhrc11factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers rgs80tsx2dhrc11: viewers · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago
rgs80tsx2dhrc11-etched.glb Publish 0.1.0 · Ray 16d ago
rgs80tsx2dhrc11-etched.step rgs80tsx2dhrc11: factory component page (tier=lcsc) · Ray 16d ago
rgs80tsx2dhrc11-hero.glb rgs80tsx2dhrc11: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
rgs80tsx2dhrc11-hero.overlay.json Publish 0.1.0 · Ray 16d ago
rgs80tsx2dhrc11.glb Publish 0.1.0 · Ray 16d ago
rgs80tsx2dhrc11.kicad_mod Publish 0.1.0 · Ray 16d ago
rgs80tsx2dhrc11.kicad_sym Publish 0.1.0 · Ray 16d ago
rgs80tsx2dhrc11.lbr Publish 0.1.0 · Ray 16d ago
rgs80tsx2dhrc11.step Publish 0.1.0 · Ray 16d ago

RGS80TSX2DHRC11

ROHM Semicon · IGBT Transistors / Modules · TO-247-3

RGS80TSX2DHRC11 from ROHM Semicon, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input IGBT gate terminal; the gate-emitter voltage is rated ±30 V (VGES).
2 Collector passive IGBT collector terminal; the collector-emitter voltage is rated 1200 V (VCES) and the package includes a built-in FRD.
3 Emitter passive IGBT emitter terminal, the reference for the collector-emitter (VCES 1200 V) and gate-emitter (VGES ±30 V) ratings.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Emitter Breakdown Voltage BVCES 1200 V IC = 10μA, VGE = 0V 2
Gate - Emitter Threshold Voltage VGE(th) 5 6 7 V VCE = 5V, IC = 6.1mA 2
Gate - Emitter Leakage Current IGES -500 500 nA VGE = ±30V, VCE = 0V 2
Collector Cut - off Current (Tj = 25°C) ICES 10 μA VCE = 1200V, VGE = 0V, Tj = 25℃ 2
Collector Cut - off Current (Tj = 175°C) ICES 5 mA VCE = 1200V, VGE = 0V, Tj = 175℃ 2
Collector - Emitter Saturation Voltage (Tj = 25°C) VCE(sat) 1.7 2.1 V IC = 40A, VGE = 15V, Tj = 25°C 2
Short Circuit Withstand Time (Tj = 25°C) tsc 10 μs VCC ≤ 600V, VGE = 15V, Tj = 25°C 3
Short Circuit Withstand Time (Tj = 150°C) tsc 8 μs VCC ≤ 600V, VGE = 15V, Tj = 150°C 3
Diode Forward Voltage (Tj = 25°C) VF 1.65 2.1 V IF = 40A, Tj = 25°C 4
Collector - Emitter Voltage VCES 1200 V 1
Gate - Emitter Voltage VGES -30 30 V 1
Collector Current (TC = 25°C) IC 80 A TC = 25°C 1
Collector Current (TC = 100°C) IC 40 A TC = 100°C 1
Pulsed Collector Current ICP 120 A Pulse width limited by Tjmax 1
Diode Forward Current (TC = 25°C) IF 80 A TC = 25°C 1
Diode Forward Current (TC = 100°C) IF 40 A TC = 100°C 1
Diode Pulsed Forward Current IFP 120 A Pulse width limited by Tjmax 1
Power Dissipation (TC = 25°C) PD 555 W TC = 25°C 1
Power Dissipation (TC = 100°C) PD 277 W TC = 100°C 1
Operating Junction Temperature Tj -40 175 °C 1
Storage Temperature Tstg -55 175 °C 1
Thermal Resistance IGBT Junction - Case Rθ(j-c) 0.27 °C/W 2
Thermal Resistance Diode Junction - Case Rθ(j-c) 0.56 °C/W 2

CAD (KiCad official)

  • Symbol: RGS80TSX2DHRC11
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: rgs80tsx2dhrc11-etched.step / rgs80tsx2dhrc11-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rgs80tsx2dhrc11.step / rgs80tsx2dhrc11.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 f136907c8678cf3d, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF