component
HIPD30N06S4L23
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHIPD30N06S4L23
HXY MOSFET · MOSFETs · TO-252-2L
HIPD30N06S4L23 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal, with VGS limited to ±20 V (absolute maximum) and gate threshold VGS(th) specified from 1.2 V min to 2.5 V max at VGS=VDS, ID=250uA. |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage VDS of 60 V with continuous drain current ID of 30 A at TC=25℃. |
| 3 | S | passive | Source terminal, with diode forward voltage VSD specified at 1.2 V max for VGS=0V, IS=1A, TJ=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 30 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 15 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 46 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 25.5 | mJ | 1 | |||
| Avalanche Current | IAS | 22.6 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 34.7 | W | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250uA | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.063 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 26 | mΩ | VGS=10V , ID=15A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 30 | 38 | mΩ | VGS=4.5V , ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS , ID =250uA | 2 | |
| VGS(th) Temperature Coefficient | △VGS(th) | -5.24 | mV/℃ | 2 | |||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Forward Transconductance | gfs | 17 | S | VDS=5V , ID=15A | 2 | ||
| Gate Resistance | Rg | 3.2 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| Total Gate Charge (4.5V) | Qg | 12.6 | nC | VDS=48V , VGS=4.5V , ID=12A | 2 | ||
| Gate-Source Charge | Qgs | 3.2 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 6.3 | nC | 2 | |||
| Turn-On Delay Time | Td(on) | 8 | ns | VDD=30V , VGS=10V , RG=3.3 , ID=10A | 2 | ||
| Rise Time | Tr | 14.2 | ns | VDD=30V , VGS=10V , RG=3.3 , ID=10A | 2 | ||
| Turn-Off Delay Time | Td(off) | 24.4 | ns | VDD=30V , VGS=10V , RG=3.3 , ID=10A | 2 | ||
| Fall Time | Tf | 4.6 | ns | VDD=30V , VGS=10V , RG=3.3 , ID=10A | 2 | ||
| Input Capacitance | Ciss | 1378 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 86 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 64 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Continuous Source Current | IS | 23 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 46 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HIPD30N06S4L23 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hipd30n06s4l23-etched.step/hipd30n06s4l23-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hipd30n06s4l23.step/hipd30n06s4l23.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
ca650c200e9fe924, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).