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HIPD30N06S4L23

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HIPD30N06S4L23

HXY MOSFET · MOSFETs · TO-252-2L

HIPD30N06S4L23 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, with VGS limited to ±20 V (absolute maximum) and gate threshold VGS(th) specified from 1.2 V min to 2.5 V max at VGS=VDS, ID=250uA.
2 D passive Drain terminal, rated for a drain-source voltage VDS of 60 V with continuous drain current ID of 30 A at TC=25℃.
3 S passive Source terminal, with diode forward voltage VSD specified at 1.2 V max for VGS=0V, IS=1A, TJ=25℃.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 30 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 15 A VGS @ 10V 1
Pulsed Drain Current IDM 46 A 1
Single Pulse Avalanche Energy EAS 25.5 mJ 1
Avalanche Current IAS 22.6 A 1
Total Power Dissipation PD@TC=25℃ 34.7 W 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W surface mounted on 1 inch2 FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250uA 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.063 V/℃ Reference to 25℃ , ID=1mA 2
Static Drain-Source On-Resistance RDS(ON) 22 26 mΩ VGS=10V , ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 30 38 mΩ VGS=4.5V , ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS , ID =250uA 2
VGS(th) Temperature Coefficient △VGS(th) -5.24 mV/℃ 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Forward Transconductance gfs 17 S VDS=5V , ID=15A 2
Gate Resistance Rg 3.2 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 12.6 nC VDS=48V , VGS=4.5V , ID=12A 2
Gate-Source Charge Qgs 3.2 nC 2
Gate-Drain Charge Qgd 6.3 nC 2
Turn-On Delay Time Td(on) 8 ns VDD=30V , VGS=10V , RG=3.3 , ID=10A 2
Rise Time Tr 14.2 ns VDD=30V , VGS=10V , RG=3.3 , ID=10A 2
Turn-Off Delay Time Td(off) 24.4 ns VDD=30V , VGS=10V , RG=3.3 , ID=10A 2
Fall Time Tf 4.6 ns VDD=30V , VGS=10V , RG=3.3 , ID=10A 2
Input Capacitance Ciss 1378 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 86 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 64 pF VDS=15V , VGS=0V , f=1MHz 2
Continuous Source Current IS 23 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 46 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HIPD30N06S4L23
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hipd30n06s4l23-etched.step / hipd30n06s4l23-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hipd30n06s4l23.step / hipd30n06s4l23.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 ca650c200e9fe924, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF