component
STPS20H100CT
Public Made by Adomby adom
STMicroelectronics Schottky Diodes, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTPS20H100CT
STMicroelectronics · Schottky Diodes · TO-220AB-3
STPS20H100CT from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of diode 1 of the dual center-tap Schottky rectifier, rated 10 A average forward current per diode and 100 V VRRM. |
| 2 | K | passive | Common cathode of both diodes (center tap), carrying up to 20 A average per device at 100 V VRRM. |
| 3 | A2 | passive | Anode of diode 2 of the dual center-tap Schottky rectifier, rated 10 A average forward current per diode and 100 V VRRM. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse leakage current, Tj = 125 °C | IR | 2 | 6 | mA | Tj = 125 °C, VR = VRRM, per diode | 3 | |
| Reverse leakage current, Tj = 25 °C | IR | 4.5 | µA | Tj = 25 °C, VR = VRRM, per diode | 3 | ||
| Forward voltage drop, Tj = 25 °C, IF = 8 A | VF | 0.71 | V | Tj = 25 °C, IF = 8 A, pulse test tp = 380 µs, δ < 2%, per diode | 3 | ||
| Forward voltage drop, Tj = 25 °C, IF = 10 A | VF | 0.77 | V | Tj = 25 °C, IF = 10 A, pulse test tp = 380 µs, δ < 2%, per diode | 3 | ||
| Forward voltage drop, Tj = 25 °C, IF = 16 A | VF | 0.81 | V | Tj = 25 °C, IF = 16 A, pulse test tp = 380 µs, δ < 2%, per diode | 3 | ||
| Forward voltage drop, Tj = 25 °C, IF = 20 A | VF | 0.88 | V | Tj = 25 °C, IF = 20 A, pulse test tp = 380 µs, δ < 2%, per diode | 3 | ||
| Forward voltage drop, Tj = 125 °C, IF = 8 A | VF | 0.56 | 0.58 | V | Tj = 125 °C, IF = 8 A, pulse test tp = 380 µs, δ < 2%, per diode | 3 | |
| Forward voltage drop, Tj = 125 °C, IF = 10 A | VF | 0.59 | 0.64 | V | Tj = 125 °C, IF = 10 A, pulse test tp = 380 µs, δ < 2%, per diode | 3 | |
| Forward voltage drop, Tj = 125 °C, IF = 16 A | VF | 0.65 | 0.68 | V | Tj = 125 °C, IF = 16 A, pulse test tp = 380 µs, δ < 2%, per diode | 3 | |
| Forward voltage drop, Tj = 125 °C, IF = 20 A | VF | 0.67 | 0.73 | V | Tj = 125 °C, IF = 20 A, pulse test tp = 380 µs, δ < 2%, per diode | 3 | |
| Repetitive peak reverse voltage | VRRM | 100 | V | 2 | |||
| Forward rms current | IF(RMS) | 30 | A | 2 | |||
| Average forward current, per diode | IF(AV) | 10 | A | δ = 0.5, square wave; TO-220AB, D2PAK, I2PAK at TC = 160 °C; per diode | 2 | ||
| Average forward current, per device | IF(AV) | 20 | A | δ = 0.5, square wave; TO-220AB, D2PAK, I2PAK at TC = 160 °C; per device | 2 | ||
| Surge non repetitive forward current | IFSM | 250 | A | tp = 10 ms sinusoidal | 2 | ||
| Repetitive peak avalanche power | PARM | 775 | W | tp = 10 µs, Tj = 125 °C | 2 | ||
| Storage temperature range | Tstg | -65 | 175 | °C | 2 | ||
| Maximum operating junction temperature | Tj | 175 | °C | Note (1): (dPtot/dTj) < (1/Rth(j-a)) to avoid thermal runaway for a diode on its own heatsink | 2 | ||
| Junction to case thermal resistance, TO-220AB, per diode | Rth(j-c) | 1.6 | °C/W | TO-220AB, D2PAK, I2PAK; per diode | 2 | ||
| Junction to case thermal resistance, TO-220AB, total | Rth(j-c) | 0.9 | °C/W | TO-220AB, D2PAK, I2PAK; total device (both diodes) | 2 | ||
| Coupling thermal resistance, TO-220AB | Rth(c) | 0.15 | °C/W | TO-220AB, D2PAK, I2PAK | 2 |
CAD (KiCad official)
- Symbol:
STPS20H100CT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
stps20h100ct-etched.step/stps20h100ct-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stps20h100ct.step/stps20h100ct.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (17 pp, sha256
3a354bdb9bb538f2, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).