component

STPS20H100CT

Public Made by Adom

by adom

STMicroelectronics Schottky Diodes, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentdiodesstps20h100ctfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 10d ago
viewers stps20h100ct: viewers · Ray 10d ago
package.json Publish 0.1.0 · Ray 10d ago
page.json Set visibility: public · Ray 10d ago
README.md Publish 0.1.0 · Ray 10d ago
stps20h100ct-etched.glb Publish 0.1.0 · Ray 10d ago
stps20h100ct-etched.step stps20h100ct: factory component page (tier=lcsc) · Ray 10d ago
stps20h100ct-hero.glb stps20h100ct: hero GLB from the etched model (keeps the MPN mark) · Ray 10d ago
stps20h100ct-hero.overlay.json Publish 0.1.0 · Ray 10d ago
stps20h100ct.glb Publish 0.1.0 · Ray 10d ago
stps20h100ct.kicad_mod Publish 0.1.0 · Ray 10d ago
stps20h100ct.kicad_sym Publish 0.1.0 · Ray 10d ago
stps20h100ct.lbr Publish 0.1.0 · Ray 10d ago
stps20h100ct.step Publish 0.1.0 · Ray 10d ago

STPS20H100CT

STMicroelectronics · Schottky Diodes · TO-220AB-3

STPS20H100CT from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of diode 1 of the dual center-tap Schottky rectifier, rated 10 A average forward current per diode and 100 V VRRM.
2 K passive Common cathode of both diodes (center tap), carrying up to 20 A average per device at 100 V VRRM.
3 A2 passive Anode of diode 2 of the dual center-tap Schottky rectifier, rated 10 A average forward current per diode and 100 V VRRM.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse leakage current, Tj = 125 °C IR 2 6 mA Tj = 125 °C, VR = VRRM, per diode 3
Reverse leakage current, Tj = 25 °C IR 4.5 µA Tj = 25 °C, VR = VRRM, per diode 3
Forward voltage drop, Tj = 25 °C, IF = 8 A VF 0.71 V Tj = 25 °C, IF = 8 A, pulse test tp = 380 µs, δ < 2%, per diode 3
Forward voltage drop, Tj = 25 °C, IF = 10 A VF 0.77 V Tj = 25 °C, IF = 10 A, pulse test tp = 380 µs, δ < 2%, per diode 3
Forward voltage drop, Tj = 25 °C, IF = 16 A VF 0.81 V Tj = 25 °C, IF = 16 A, pulse test tp = 380 µs, δ < 2%, per diode 3
Forward voltage drop, Tj = 25 °C, IF = 20 A VF 0.88 V Tj = 25 °C, IF = 20 A, pulse test tp = 380 µs, δ < 2%, per diode 3
Forward voltage drop, Tj = 125 °C, IF = 8 A VF 0.56 0.58 V Tj = 125 °C, IF = 8 A, pulse test tp = 380 µs, δ < 2%, per diode 3
Forward voltage drop, Tj = 125 °C, IF = 10 A VF 0.59 0.64 V Tj = 125 °C, IF = 10 A, pulse test tp = 380 µs, δ < 2%, per diode 3
Forward voltage drop, Tj = 125 °C, IF = 16 A VF 0.65 0.68 V Tj = 125 °C, IF = 16 A, pulse test tp = 380 µs, δ < 2%, per diode 3
Forward voltage drop, Tj = 125 °C, IF = 20 A VF 0.67 0.73 V Tj = 125 °C, IF = 20 A, pulse test tp = 380 µs, δ < 2%, per diode 3
Repetitive peak reverse voltage VRRM 100 V 2
Forward rms current IF(RMS) 30 A 2
Average forward current, per diode IF(AV) 10 A δ = 0.5, square wave; TO-220AB, D2PAK, I2PAK at TC = 160 °C; per diode 2
Average forward current, per device IF(AV) 20 A δ = 0.5, square wave; TO-220AB, D2PAK, I2PAK at TC = 160 °C; per device 2
Surge non repetitive forward current IFSM 250 A tp = 10 ms sinusoidal 2
Repetitive peak avalanche power PARM 775 W tp = 10 µs, Tj = 125 °C 2
Storage temperature range Tstg -65 175 °C 2
Maximum operating junction temperature Tj 175 °C Note (1): (dPtot/dTj) < (1/Rth(j-a)) to avoid thermal runaway for a diode on its own heatsink 2
Junction to case thermal resistance, TO-220AB, per diode Rth(j-c) 1.6 °C/W TO-220AB, D2PAK, I2PAK; per diode 2
Junction to case thermal resistance, TO-220AB, total Rth(j-c) 0.9 °C/W TO-220AB, D2PAK, I2PAK; total device (both diodes) 2
Coupling thermal resistance, TO-220AB Rth(c) 0.15 °C/W TO-220AB, D2PAK, I2PAK 2

CAD (KiCad official)

  • Symbol: STPS20H100CT
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: stps20h100ct-etched.step / stps20h100ct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stps20h100ct.step / stps20h100ct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (17 pp, sha256 3a354bdb9bb538f2, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF