component
PN8161SE-M1
Public Made by Adomby adom
Wuxi Chipown Micro-electronics DC-DC Converters, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPN8161SE-M1
Wuxi Chipown Micro-electronics · DC-DC Converters · SOP-8
PN8161SE-M1 from Wuxi Chipown Micro-electronics, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Ground pin; keep the trace from GND to the input electrolytic capacitor ground short and thick. |
| 2 | VDD | power_in | Operating supply input pin, 9-38V operating range with -0.3 to 40V absolute maximum, VDDon 16.5V typ, VDDoff 8.0V typ and VDD OVP 39.0V typ. |
| 3 | FB | input | Feedback input pin with -0.3 to 6.5V absolute maximum, open-circuit voltage 4.8V typ, and overload protection threshold 4.3V typ. |
| 4 | DMG | input | Demagnetization pin sampling output and input voltage via a resistor divider for valley detection, output OVP (3V typ threshold) and input undervoltage protection, rated -1 to 6.5V at IDMG≤10mA. |
| 5 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 690V, shorted together with pins 6, 7 and 8. |
| 6 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 690V, shorted together with pins 5, 7 and 8. |
| 7 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 690V, shorted together with pins 5, 6 and 8. |
| 8 | SW | passive | High-voltage MOSFET drain pin, rated -0.3 to 690V, shorted together with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi Chipown Micro-electronics |
| Package | SOP-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| 功率管耐压 Drain-source breakdown voltage | BVDSS | 690 | V | ISW=250uA, TJ=25°C | 3 | ||
| 关态漏电流 Off-state leakage current | IOFF | 10 | 25 | 40 | μA | Vsw=650V, TJ=25°C | 3 |
| VDD启动阈值电压 VDD turn-on threshold | VDDon | 15.5 | 16.5 | 17.5 | V | 3 | |
| VDD欠压保护阈值电压 VDD UVLO threshold | VDDoff | 7 | 8 | 9 | V | 3 | |
| VDD过压保护电压 VDD OVP voltage | VDDovp | 38 | 39 | 40 | V | 3 | |
| 启动管充电电流 Startup charging current | IVDD_CH | -2 | -1 | -0.5 | mA | 3 | |
| 开关态工作电流 Operating current switching | IVDD0 | 1 | 2.5 | 4 | mA | VFB=3.5V | 3 |
| 间歇态工作电流 Operating current burst | IVDD1 | 0.4 | 0.8 | 1.5 | mA | VFB=0.5V | 3 |
| 保护态工作电流 Fault state current | IVDD_Fault | 0.2 | 0.6 | 1.5 | mA | 3 | |
| FB开路电压 FB open-circuit voltage | VFB | 4.6 | 4.8 | 5.4 | V | 3 | |
| FB短路电流 FB short-circuit current | IFB_SHORT | 0.18 | 0.22 | 0.24 | mA | 3 | |
| 过载保护阈值电压 Overload protection threshold | Vth_OLP | 4.1 | 4.3 | 4.5 | V | VDD=18V | 3 |
| 最大峰值电流 Max peak current | IDlim | 1.05 | 1.1 | 1.15 | A | 3 | |
| 输出过压保护阈值 Output OVP threshold | VDMG_OVP | 2.7 | 3 | 3.3 | V | VFB=2.0V | 4 |
| 间歇态工作频率 Burst-mode frequency | Fosc_BM | 22 | 25 | 28 | kHz | 4 | |
| 输入欠压保护阈值 Input undervoltage threshold current | IDMG_BNO | 180 | 200 | 220 | uA | 4 | |
| 过温保护温度 Thermal shutdown temperature | TSD | 130 | 145 | °C | 4 | ||
| 导通电阻 On resistance | RDS(on) | 1.6 | Ω | ISW=1.0A, TJ=25°C | 3 | ||
| VDD BM保持阈值 VDD BM hold threshold | Vhold | 9 | V | 3 | |||
| 降频模式阈值电压 PFM threshold | VFB_PFM | 2.5 | V | VDMG≥1.4V | 3 | ||
| 降频模式阈值电压 PFM threshold | VFB_PFM | 2 | V | VDMG<1.4V | 3 | ||
| 间歇模式阈值电压 Burst mode threshold | VFB_BM | 1.15 | V | 3 | |||
| 间歇模式迟滞电压 Burst mode hysteresis | VFB_BM_HYS | 100 | mV | 3 | |||
| 软启动时间 Soft-start time | Tss | 7.5 | ms | 3 | |||
| 前沿消隐时间 Leading edge blanking time | TLEB | 400 | ns | 3 | |||
| Burst-mode 峰值电流 | IDbm | 0.3 | A | 4 | |||
| 次级整流短路保护阈值 | IDSP | 2.2 | A | 4 | |||
| 次级整流短路保护延迟时间 | Td_DSP | 7 | Cycles | 4 | |||
| 输出过压保护延迟时间 | Td_DOVP | 7 | Cycles | 4 | |||
| 最大时钟开启等待时间 | Thold | 5 | us | 4 | |||
| 最大开启时间 | Ton_max | 25 | us | 4 | |||
| 最高工作频率 | Fosc_QR | 125 | kHz | 4 | |||
| 输入欠压保护延迟时间 | Td_BNO | 30 | ms | 4 | |||
| 过温保护回差 Thermal shutdown hysteresis | THYST | 20 | °C | 4 | |||
| VDD脚耐压 | VDD | -0.3 | 40 | V | 3 | ||
| FB脚耐压 | FB | -0.3 | 6.5 | V | 3 | ||
| DMG脚耐压 | DMG | -1 | 6.5 | V | IDMG≤10mA | 3 | |
| SW脚耐压 | SW | -0.3 | 690 | V | 3 | ||
| 结工作温度范围 Junction temperature | TJ | -40 | 150 | °C | 3 | ||
| 存储温度范围 Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| 人体模式ESD能力 HBM | -2 | 2 | kV | HBM, ANSI/ESDA/JEDEC JS-001-2017 | 3 | ||
| 漏极脉冲电流 | 5 | A | Tpulse=100us | 3 | |||
| 封装热阻 θJC | θJC | 40 | °C/W | SOP8 | 3 |
CAD (KiCad official)
- Symbol:
PN8161SE-M1 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
pn8161se-m1-etched.step/pn8161se-m1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pn8161se-m1.step/pn8161se-m1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi Chipown Micro-electronics datasheet (11 pp, sha256
de5d014f7bd3bab0, retrieved 2026-10-26, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).